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This paper reports RF losses and buffer isolation analysis of AlGaN/GaN epitaxial layers grown on high resistive Si(111) substrate with different GaN buffer thicknesses. Measurements are performed at different temperatures. At 85°C, measurements exhibit very low isolation current down to 80 nA/mm between two ohmic contacts biased at 180 V and separated by 10 μm. At 100°C, coplanar lines show RF losses...
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