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In this work, a AlGaN/GaN based High Electron Mobility Transistor with 3 μm gate length is designed and simulated with the Silvaco TCAD software which is passivated by SiO2. A drain current of 658 mA/mm is found for a gate voltage of 2.5 V. The transconductance of the device is 123 mS/mm at the gate voltage of 2V. A maximum output conductance of 163 mS/mm is obtained at the drain voltage of 45 V....
We report excellent low-voltage (5 to drain bias) microwave and millimeter-wave performance of deeply scaled InAn/AlN/GaN devices with field-plate gate of length, MBE regrown ohmic contacts, and sub-500-nm S-D spacing on four different wafers. These four wafers include also T-gate (no field-plate) devices with very thin passivation and smaller...
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