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This paper reported the study of growth of AlxGa1-xN thin film on a-plane sapphire substrate using plasma assisted metal organic chemical vapor deposition (PA-MOCVD). We have successfully growth the Al content AlGaN alloys and investigated the influence of TMA/TMAl+TMGa flow rate ratio to their crystal structure and surface morphology. From S EM image and XRD measurement, the AlGaN films grown with...
Ion selective electrodes (ISEs) and ion selective field effect transistors (ISFETs) based on indium nitride (InN) film were used for detecting anions in aqueous solutions. The positively charged surface states on InN surfaces selectively adsorbed anions, building Helmholtz voltages near the InN/solution interface was confirmed using open-circuit potentiometric and I-V measurements. The InN-based ISE...
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