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This paper presents the results of a numerical analysis on the electrical interconnect options of a Power QFN (PQFN) package, to explore and compare the RDS(ON) performance at DC condition. The modeling involves the PQFN 5mm × 6mm package which initially uses Aluminum wire bonds for interconnection. Competition in the market in terms of better electrical performance packages challenge semiconductor...
To discuss the electromigration reliability of the copper chip interconnect, a transient non-linear dynamic and electrical finite element framework was developed. The simulation includes two major areas: one is the impact of the electromigration caused by current density and another one is the stress-migration relate to thermal-stress distribution in Cu interconnects. It was found that compared with...
Copper (Cu) wire bonding is getting more common as interconnections on aluminium (Al) bond pad metallization in microelectronics due to lower cost compared to gold wire bonding. The Cu-Al intermetallic compounds (IMC) growth in Cu ball bonds has been investigated by many researches but the understanding of the IMC phases is still incomplete and the impact to bond reliability know-how is limited. This...
In this paper we report on the use of Silicon wafer to wafer bonding technology using Trough Silicon Vias (TSV) and Cu to Cu hybrid interconnects. We demonstrate that multiple wiring levels of two separate wafers, can be interconnected on a full wafer scale by means of wafer bonding using classical metallization schemes found in IC's such as Al and Cu interconnect technologies. The wafer to wafer...
Increasing cost of gold (Au) for bonding wires and decreasing die and, therefore, bond pad size raise the demand for alternative bonding wire materials. A cheap alternative with good electrical conductivity is copper. Cu wire is harder than gold and aluminium. The material itself shows a pronounced strain hardening, so that the hardness increases significantly during ball bonding. These mechanical...
Ball bonding processes are optimized on Al pads with a 25.4 ??m diameter Cu wire to obtain maximum average shear strengths of at least 120 MPa. To quantify the direct effect of bond force and ultrasound on the pad stress, ball bonding is performed on test pads with piezoresistive microsensors integrated next to the pad and the real-time ultrasonic signals are measured. By using a lower value of bond...
In-situ observation of stress in Al interconnects under electromigration and thermal effect by using the synchrotron radiation x-ray diffraction. The test temperature was controlled by changing the current density of W (self-heating structure). The EM-induced stress was also investigated with current densities from 3times105A/cm2 to 4times106A/cm2. The conclusion agreed well with the simulation results.
This paper presents the interconnection of single-walled carbon nanotube (SWNT) between electrodes on a CMOS integrated circuit chip made by TSMC 0.35 mum CMOS process. Alternating current dielectrophoretic force (AC-DEP) method is employed to micro-electrode that makes SWNTs deposited between electrodes. Using electroless nickel and immersion gold to cover the electrodes of Al could really increase...
A post-processing module for converting monolithic silicon electronics into a large area system is presented. The concept is based on the previously demonstrated capability of a mesh-patterned, free-standing copper interconnects to be plastically stretched [1]. When such stretchable mesh interconnect is added to a functional silicon wafer, closely spaced array of IC dies can be expanded into a large-area...
In the semiconductor industry to increase the power density, improve the electrical performances and optimize the robustness in the application, more and more key roles are covered by back-end processes and in particular by bonding technology used to connect power silicon chip and metallic leadframe that for Power devices is one of more impacting process. The performed studies, evaluations and production...
The request of the electronic market to increase the working temperature of power integrated circuits up to 180-200degC has a big impact on the reliability of standard plastic packages. The joint between bonding ball and pad is mainly affected in conditions of high temperature and high current. Various solutions were tried in order to reach the target with standard interconnection solutions. If Au...
The presentation addresses the reliability of Au ball bonds of different Au wire qualities on Al chip metallizations of different thicknesses and compositions at temperature storage from 100 to 200degC up to 4000 h. In this context the interfacial reactions and intermetallic phase coverage directly after the bonding process was optimized to get the best starting condition for phase growth at elevated...
This paper presents the interconnection of single - walled carbon nanotube (SWNT) between electrodes on a CMOS integrated circuit chip made by TSMC 0.35 ??m CMOS process. Using Electroless Nickel and Immersion Gold to cover the electrodes of Al could really increase the current more than 3 orders when SWNTs are connected between electrodes. One of the applications to this chip may be gas sensing,...
The story of copper wire has existed for decades, and it always looked to be a very promising material. However, despite all of its positive properties copper bonding wire never managed to find such a wide use as did gold wire. In recent years many semiconductor manufacturers made great efforts to replace gold with copper wire. Driving forces are the high gold price and some design benefits due to...
Thermosonic copper ball bonding is an interconnection technology that serves as a viable and cost-saving alternative to gold ball bonding. However, the reliability of copper bonds remains to be ascertained. Intermetallic compounds (IMCs) and possible voids and cracks may grow and propagate at the interface of bonds during their service. The proper IMCs formation is beneficial to bonding strength but...
Since recent years, the micro-electronic industry changes the material usage, design and structure, in order to satisfy the customer demands of the higher performance and smaller size. One of the examples is the change of the basic materials from Al/SiO2 to Cu/low-k in IC interconnect structure. As a consequence, new reliability issues at device/product level have been discovered, and most of the...
The replacement of Au and Al wires with Cu wires in wire bonding has become an emerging trend in IC packaging nowadays. Although some research works have been carried out for the applications of Cu wire bonding, they are mainly focused on the processing and material issues of Cu wire bonds. However, the Cu in the wire bonds may diffuse into the Si chip and impose reliability threats to the silicon...
In this study, hydrogen silsesquioxane (HSQ) thin films are employed as the intermetal dielectric, and the high frequency characteristics of Al-HSQ and Cu/Ta-HSQ system are investigated and compared with those of Al-SiO2 system. The S-parameters of the interconnect are measured for insertion loss and crosstalk noise. The interconnect transmission parameters are extracted from the S-parameters. A figure...
Various technologies have been developed to package microwave systems to achieve low-cost, high-integration, better RF performance and good thermal dissipation. In this paper, we propose a new type packaging technology, "pocket embedded packaging (PEP)", using selectively anodized aluminum substrate. In this technology, chips can be embedded inside aluminum substrate so that ultra thin and...
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