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Alumina (Al2O3) thin films have been deposited on silicon substrates by atomic layer deposition at 200°C using TMA as Al precursor and H2O or O3 as oxygen precursor. The growth rate has been found to be lower for ozone-based processes as compared to H2O. The electrical characterization of the deposited layers has shown that when using O3 the films exhibit larger defect densities as compared to those...
This paper summarizes the electrical characterization of MIM capacitor realized in three dimensions. Manufacturing of the device is described, as well as an electrical comparison of three dielectrics, Si3N4, Al2O3, Ta2O5 and two deposition methods, metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Selecting Al2O3 deposited by ALD, high density of 35 nF/mm2 is obtained...
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