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Atomic layer deposition (ALD) is widely in use for depositing a variety of materials, such as metal oxides, metal nitrides and metals, in a conformal and defect-free form at low temperatures on high aspect-ratio substrates. These advantages make ALD uniquely powerful method for applications where sensitive substrate materials combine with extreme demands on coating quality and temperature/chemical...
A thermal (RuO4/H2-gas) and a plasma enhanced (RuO4/H2-plasma) atomic layer deposition (ALD) process for deposition of Ru are reported. The ALD characteristics and film properties of both processes are presented. The thermal process is compared to the plasma process in terms of film properties as a function of sample temperature. Finally, a discussion about the probable ALD reaction mechanisms is...
The Photovoltaic (PV) industry is seeking to increase efficiency and functional lifetime of PV modules manufactured on polymer substrates. High resolution and high speed surface inspection for the quality control of the manufacture of large area flexible PV modules are necessary to guarantee maximum quality, longer lifetime and enhanced product yield. Flexible PV films are the newest development in...
Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and...
Tetrakis (diethylamino) hafnium and tetrakis (diethylamino) titanium were used for the atomic layer deposition (ALD) of HfO2 and TiO2 films on silicon (100) substrates with water being the oxidant. Studies on the decomposition temperatures of both metal precursors within the reactor and on carbon impurity helped determine the optimal ALD temperature range. X-ray photoelectron spectroscopy showed that...
We have demonstrated high-performance deep-submicron inversion-mode InGaAs MOSFETs with gate lengths down to 150 nm with record Gm exceeding 1.1 mS/μm. Oxide thickness scaling is performed to improve the on-state/off-state performance and Gm is further improved to 1.3 mS/μm. HBr pre-cleaning, retro-grade structure and halo-implantation processes are first time introduced into III-V MOSFETs to steadily...
LaAlOx with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaAlOx compare to La2O3 deposition. The mechanism behind improvement is proposed. ALD LaAlOx is found to be thermally stable up to 850??C anneal. Compared with Al2O3 blocking oxide control samples, the SONOS devices with LaAlOx blocking...
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