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In this work, we explore other important factors including ionic response to applied voltages, salt contamination of oxides, bias dependence of signal drift and hysteresis in the presence of fluid.
An alternative characterization technique for ultra-thin gate oxides unveils that a magnetic field, applied parallel to the surface and perpendicular to the channel current, modulates both gate oxide tunneling and channel current. This is attributed to magnetic modulation of both quantum confinement and the Si-SiO2 potential barrier of a MOSFET. This new characterization technique is used to measure...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
We present a generic method for analyzing the effect of process variability in nanoscale circuits. The proposed framework uses kernel and a generic tail probability estimator to eliminate the need for a-priori density choice for the nature of circuit variation. This allows capturing the true nature of the circuit variation from a few random samples of its observed responses. The data-driven, non-parametric,...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
A general scheme for the VLSI implementation of wavelet transform using switched-current (SI) circuits is firstly presented in this paper. SI circuits are well suited for this application since the dilation constant across different scales of the transform can be precisely implemented and controlled by both the transconductance (W/L) ratios and the clock frequency. The circuits are composed of analog...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
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