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This paper describes general considerations for the design of highly efficient and distributed room-temperature Terahertz detectors and transmitters in (Bi)CMOS technologies. It discusses the design of industrial-grade scalable terahertz imaging systems. This necessitates a deep understanding of the process technologies front-end and the back-end, as well employing innovative architectures of terahertz...
We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular...
In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. Κ the channel mobility of strained Si R-PWT is 400 cm·V−1·s1, R-PWT can be operated as THz detector when channel length l= 21–28 nm.
We study scaling behaviour of terahertz responsivity and low-frequency noise of silicon MOSFET-based detectors. A set of 550-GHz resonant patch-antenna-coupled transistors with different channel widths varying from 320 nm to 1920 nm have been fabricated and investigated in temperature range from 77 K to 360 K. We find that the best sensitivities are achieved for narrowest devices without applied bias...
This paper presents the effect SOI detector's bias voltage has on current-voltage characteristics of different types of transistors (core transistors, io transistors, body floating, sourcetie, body-tie, low/normal/high threshold voltage). Methods of minimizing this effect were presented. Also, the I–V characteristic of transistors utilizing shielding layer (BPW - buried P Well) were measured and presented...
This paper presents a dual stage charge-sensitive amplifier designed for long silicon strip detectors. It allows to obtain a linear Time-over-Threshold processing using constant current feedback for charge and interaction time measurements when working with large capacitance sensors (e.g. Cdet=30 pF). The paper includes details of architecture and simulation results.
The article describes the development of the new design of the X-ray detector with direct conversion. A storage capacitor and a key-based field-effect transistor are created in each of the pixel detectors. The control of the key is carried out by applying the pulses to the gates of the transistors combined in the matrix columns the charge of the key pixels is removed from the rows of the matrix, respectively.
We summarize several lines of investigation of foundry-processed patch-antenna-coupled Si MOSFETs as plasmonic detectors of THz radiation. First, we explore detection at frequencies as high as 4.3 THz, about one hundred times higher than the transit-time-limited cut-off frequency of the devices, searching for the fundamental limits of the detection principle. Then, we address the much-debated issue...
Future imaging applications in the submillimeter-Wave range (300GHz to 3THz) require RF systems that can achieve high sensitivity and portability at low power consumption levels. In particular, CMOS process technologies are attractive due to their low price tag for industrial, surveillance, scientific, and medical applications. Recently, CMOS-based detectors have shown good sensitivity up to 1THz...
Distributed phenomena permit the use of field-effect transistors for the detection of frequencies far beyond transistor cut-off. This contribution gives details on an improved design for patch antenna-coupled field-effect-transistors and shows sensitive detection from 0.2 to 4.3 THz for monolithically integrated devices relying on commercial 0.15-μm CMOS process technology. Room-temperature responsivity...
We are developing monolithic pixel detectors with a 0.2 um CMOS, fully-depleted silicon-on-insulator (SOI) technology. The substrate is high-resistivity silicon and works as a radiation sensor having p-n junctions. The SOI layer is a 40 nm thick silicon, where readout electronics is implemented. There is a buried oxide (BOX) layer between these silicon layers. There is no mechanical bonding in the...
We studied the feasibility of monolithic silicon-germanium front-ends for cryogenic semiconductor detectors. In this framework we designed and simulated a low-noise Charge Sensitive Preamplifier for High Purity Germanium detectors using the Austria Micro System S35 silicon-germanium technology. The preamplifier uses two silicon-germanium Hetero-junction Bipolar Transistors, a few silicon Metal-Oxide-Silicon...
This work presents the project of a silicon strip detector readout circuit. The circuit is to be used in the multichannel detector readout integrated circuit with a possible application in High Energy Physics Experiments. The charge measurement is based on the Time-over-Threshold method which allows integration of the low-power ADC into each channel.
The combined Detector/Amplifier structure DePFET (Depleted P-channel Field Effect Transistor) features excellent energy resolution, low noise readout at high speed and low power consumption. This is combined with the possibility of random acessibility of pixels and on-demand readout. In addition it possesses all advantages of a sideways depleted device, i.e. 100% fill factor and very good quantum...
A new techniques in a Silicon-on-Insulator (SOI) process for pixelated radiation detectors are developed. One is called buried p-well (BPW) to suppress back gate effect, and the other is vertical (3D) integration technology to achieve much higher density. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light,...
We report on heterodyne detection of 0.65-THz radiation with silicon CMOS transistors. With a fairly low local-oscillator power of -27 dBm delivered to the detector, we measure a noise power of -111 dBm/Hz. The 3-dB sensitivity roll-off of the intermediate frequency (IF) is as high as 750 kHz. The detectors exhibit an almost frequency-independent signal-to-noise ratio of 45 dB over the whole measured...
This paper proposes a novel handshaking quasi-adiabatic logic (HQAL) circuit, which combines the advantages of adiabatic logics with those of asynchronous circuits. A HQAL circuit is composed of adiabatic logic blocks and the handshake control chain (HCC). The power of the adiabatic logic blocks in HQAL is controlled and supplied by the HCC, and the logic blocks in HQAL become active only when performing...
The paper reports a Silicon Drift Detectors (SDD) with on-chip front-end electronics. These detectors will be used for high resolution X-rays spectroscopy applications, either at room temperature or at cryogenic conditions, and can efficiently operate at very high rates of the impinging radiation (105 cps/cm2). Silicon Drift Detectors, proposed for the first time in 1983, are fully depleted detectors...
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