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The smallest wirelessly powered neural implant to date is demonstrated. Power is sent over a near-field inductive link. The implant system is realized on a single CMOS ASIC which includes the on-chip coil, the harvesting circuit, and the current driver. The entire system is fabricated in a 0.13 μm CMOS process and occupies merely 180 μm × 180 μm.
The aim of this paper is to develop a formalism for porous Si dielectric parameter extraction for use in RF passive device design. We show that the extracted dielectric parameters using this formalism can be reliably used to simulate the experimental behavior of coplanar waveguides and inductors. In this respect we have fabricated RF devices on porous Si, extracted the dielectric parameters of the...
The advantages of single-ended transmission lines are their simplicity and high flexibility of interconnection. Generally, shielding with additional ground lines is essential to improving the immunity of single-ended RF/high-speed signals against noise. However, this approach is very difficult to realize for a single-ended through silicon via (TSV) in 3D ICs because of the strong dependence of characteristic...
This paper presents a silicon platform with Through-silicon vias (TSV) interconnects for Radio-Frequency applications, implemented in a via-last integration scheme. As it is aimed at transmitting a wide range of signals, it is mandatory to accurately evaluate frequency dependent loss of TSV. To achieve attractive RF performances, the silicon platform is carried out on High-Resistivity (HR) substrates...
This paper presents a silicon platform with Through-silicon vias (TSV) interconnects for Radio-Frequency applications, implemented in a via-last integration scheme. As it is aimed at transmitting a wide range of signals, it is mandatory to accurately evaluate frequency dependent loss of TSV. To achieve attractive RF performances, the silicon platform is carried out on High-Resistivity (HR) substrates...
A Silicon-on-Insulator (SOI) CMOS technology on high resistivity silicon substrates is presented for the design of cellular antenna switches. The design and measurement results for an SP9T cellular antenna switch based on this technology are presented. To the best of our knowledge, this is the first demonstration of an SP9T cellular antenna switch with adequate intermodulation and harmonic distortion...
This paper presents an implementation of RF passive components on a low resistivity Si substrate with a thick ajinomoto build-up film (ABF) to reduce electromagnetic field interaction with the Si substrate. The comparison of three coplanar waveguides (CPWs) on different Si substrates has been performed to provide feasibility of ABF-layer approach. After that, a bandpass filter and baluns have been...
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