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High-voltage direct current (HVDC) circuit breaker with rapid fault clearing is an important equipment for protecting DC transmission system. The mechanical vacuum circuit breaker based on artificial current zero (ACZ) is excellent to interrupt the large current. A prototype of mechanical HVDC circuit breaker based on ACZ is simulated by Matlab in this paper. The main circuit breaker and the commutation...
In the paper the approaches how to develop models of electrotechnical objects using the test example of two-winding transformer are discussed. A comparing of the continuous model created using the description of physical processes and discrete macromodel obtained using the “black box” approach based on field experiment are carried out. It is shown that the model obtained using the “black box” approach...
This paper presents a comparison of two identical gallium nitride (GaN) cascode transistors with different TO-220 packaging configurations. The transistors were analyzed using a precision frequency domain impedance analyzer; and lumped, per-terminal estimates were developed for the parasitic package inductance of each device. It was found that the devices have different per-terminal lead inductances,...
In Indonesia, there are many capacitor bank installed to regulate the nominal voltage. Currently, the Recovery Voltage (RV) data related to the capacitor bank switching is unavailable, whereas this data is very important to analyze Circuit Breaker (CB) performance to understand whether it will success to interrupt the current or not. In addition, if the CB cannot retain the RV, it will degrade the...
The controlled switch became a technical solution for reducing the switching stress. The controlled switching can be applied to any type of commutations. There are now dedicated controllers which are used more often for the switching of the transport and distribution lines, of the small inductive loads, of the capacitors batteries, or for energizing the no load power transformers. The paper deals...
Teaching electrical engineering with the help of simulation packages is very essential nowadays to explain/examine the circuit topologies and operation. The paper focuses on the power factor compensation in the three-phase electric circuits. The three-phase electric network, working on a known nominal power, will be simulated using OrCAD, a programme for electric circuit modeling and simulation.
A physically based SPICE compact model for unipolar resistive memories is presented. The model includes ohmic and quantum conduction accounting for filamentary resistive switching operation. In addition, a detailed description of thermal effects is incorporated. Different types of conductive filaments (CFs) can be taken into consideration; in particular, tree-branch shaped filaments. The implementation...
This paper introduces a simplified method for estimating switching energy losses in an IGBT device of a Voltage Source Converter (VSC) using Electro-Magnetic Transient (EMT) simulations. By considering the switching process as characterized by an equivalent circuit model of a unit cell that represents one leg of a VSC, equations are derived to evaluate the switching losses at different load currents...
This paper presents the prestriking and re-striking phenomenon caused by switching disconnect switches in a highvoltage switchyard. A detailed transient model of a representative utility 345 kV substation was developed in the electromagnetic transient program, EMTP-RV and the phenomenon was studied for different cases of multiple prestrike transients. It was determined that the transient voltages...
High-frequency switching overvolatges (SOV) are considered as a possible source causing component failures in existing offshore wind farms (OWFs). In order to study such overvolatges in OWFs, the main OWF components, including vacuum circuit breaker (VCB), submarine cables and transformers should be properly investigated. Firstly the parameters influencing VCB behaviors are considered, such as current...
Traditional IGBT turn-on loss evaluation methods are curve fitting of double pulse test data without insight of IGBT turn-on process. This paper proposed an analytical evaluation method of IGBT turn-on loss. In the proposed method, a qualitative IGBT switching waveform and an IGBT switching trajectory in output characteristics are used to analyze IGBT turn-on process. The detailed expressions for...
Higher density, tighter margin and lower cost power solutions for the cutting edge datacenter require more characterization of voltage regulator (VR) beyond its power conversion performance such as voltage ratio and efficiency. Fast transient, ground noise sharing and high frequency switching noises coupling to high speed IO are some of the technical aspects that need to be predicted and designed...
High speed switching of WBG devices causes their switching behavior to be highly susceptible to the parasitics in the circuit, including inductive loads. An inductive load consisting of a motor and power cable significantly worsens the switching speed and losses of SiC MOSFETs in a PWM inverter. This paper focuses on the motor plus power cable based inductive load, and aims at mitigating its negative...
In this paper, a new single switch bridgeless AC/DC power factor correction PFC converter topology to achieve high PF and low THD is proposed. The proposed converter is based on the single ended primary inductance converter SEPIC topology. The SEPIC converters can operating from an input voltage that is greater or less than the output voltage. The proposed PFC uses only one active switch to PFC process...
The purpose of this paper is to discuss a current prediction algorithm for sensorless model control dc-dc converter. In the proposed method, the sensing resistor for the current detection is eliminated by predicting the output current. The output current is predicted from the equation of the relationship between the output and input voltage in the static state using the duty ratio and the output voltage...
The switching transient properties of conventional power semiconductors (Silicon MOSFET and IGBT) have been proposed for online junction temperature (Tj) sensing. This method utilizes the semiconductor Tj dependent characteristics and the gate drive output dynamics. In this paper, the method is applied to wide bandgap power semiconductor, Silicon-Carbide (SiC) MOSFET. In order to demonstrate the SiC...
Aside from the benefits it brings, 3D-IC technology inevitably exacerbates the difficulty of power delivery with volumetrically increasing power consumption. Recent work managed to “recycle” current within the 3D stack by linking the different layers' supply/ground nets into a series connection. This charge-recycled (also known as voltage-stacked, or V-S) scheme provides a scalable solution for 3D-IC's...
This paper presents a comprehensive study of the GaN HEMT switching performance in a phase-leg configuration with special focus on the impact of different parasitic effects. Therefore, a simulation model of a double pulse test circuit with GaN devices and including parasitic elements is proposed. The causes of parasitic inductances and capacitances are discussed and their effects are analyzed. Furthermore,...
Using a three-dimensional device simulator, we evaluate the single event upset probability of spin-transfer torque magnetic random access memory (STT-MRAM) supposing various radiation conditions such as linear energy transfer and incident direction. It is shown that STT-MRAM has enough tolerance for the radiation on the ground considering typical MTJ parameters for the present MRAM technology.
The present work proposes an improved PSPICE implementation of the equivalent electrical model of silicon photomultipliers (SiPMs) to simulate and predict their transient response to avalanche trigger events. In particular, the developed model provides a detailed investigation of magnitude and timing of the read-out signals and can therefore be exploited to perform reliable circuit-level simulations...
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