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A 1.8-mW, 18.5-mm2 64-channel current readout ASIC was implemented in 0.18-μm CMOS together with a new calibration scheme for silicon nanowire biosensor arrays. The ASIC consists of 64 channels of dedicated readout and conditioning circuits which incorporate correlated double sampling scheme to reduce the effect of 1/f noise and offset from the analog front-end. The ASIC provides a 10-bit digital...
A new method to fabricate high-performance gate-all-around silicon (Si) nanowire transistors (SNWTs) based on fully Si bulk (FSB) substrate is proposed and demonstrated by both simulation and experiments in this paper. Due to the large fan-out and deep junction of Si source/drain (S/D) region connecting with the bulk substrate, the FSB SNWTs can effectively alleviate the self-heating effects with...
With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive...
A silicon nanowire (SiNW) biosensor for label-free and real-time detection has been fabricated by complementary metal-oxide semiconductor (CMOS) technology. For the detection of prostate-specific antigen (PSA) used as a biomarker of prostate cancer the SiNW surface was modified to immobilise the antibody of PSA (anti-PSA). Real-time monitoring reveals the change in conductivity of the SiNW on specific...
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