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Phosphorus activated in germanium epitaxy atop Si wafer by low-temperature microwave annealing technique was investigated in this letter. Compared to the conventional RTA process, the temperature of phosphorus activation could be 120°C to 140°C which is an improvement in temperature reduction at the same sheet resistance. According to the SRP, up to 150°C reduction in maximum temperature at the same...
Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By optimizing the process, a dislocation free InP layer has been successfully grown on top of silicon wafer, which can be used as the base for active devices.
A multi-physics multi-scale modeling platform has been developed and it has been applied to various stages of the LED manufacturing such as MOCVD reactor design, epitaxial growth based on silicon wafer, chip design and manufacturing, module packaging and assembly, and specific lamps. Discussions are also given to the ultra-scalable reactor design, material constitutive modeling, and curvature evolution...
End of line device failure analysis and inline defectivity investigations revealed a previously undetected surface killer defect that was generated during a front side polish process of integrated circuit Si substrate starting material. A surface defect impacting over 20% of the wafer was found to exist prior to Si Epitaxial growth. This surface defect was discovered by using the Surfscan SP1 TBItrade...
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