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An effective optimization approach for the electromigration (EM) reliability in power grid (PG) has been presented in this paper. With core technology development and the key feature size of integrated circuits decreasing, it is more serious for the EM-induced failure occurrence in the entire PG. However, previous PG studies focus on supply noise optimization and neglect the EM influence in lines,...
The majority of interconnects in an integrated circuit is composed of via-terminated segments that are connected to atomic sinks or reservoirs. In this paper, we investigate electromigration failure of Cu/low-k conductors with active (current carrying) sinks and reservoirs, as well as configurations where currents flow into or out of a common via. We show that when steady-state stress profiles are...
Over the years, there has been tremendous progress in developing new methods for modeling and diagnosing reliability at the level of individual transistors and interconnects. The thrust to propagate these models to higher levels of abstraction to predict the reliability of larger circuits is much more recent. This paper addresses the intersection of physics, circuits, and architecture for reliability...
Failures caused by the electromigration (EM) are becoming a primary reliability concern of integrated circuits and electronics packaging designers and manufacturers. In the foreseeable future, the trend of greater scale integration and further miniaturization in the microelectronics industry is expected to continue and this will make the metallization in electronics devices more susceptible to EM...
In the period of extreme CMOS scaling, reliability issues are becoming a critical problem. These problems include issues related to device reliability, in the form of bias temperature instability, hot carrier injection, time-dependent dielectric breakdown of gate oxides, as well as interconnect reliability concerns such as electromigration and TSV stress in 3D integrated circuits. This tutorial surveys...
We study the impact of microstructure on nucleation and evolution of electromigration induced voids. The grain boundaries are described with a comprehensive model which includes the dynamics of mobile and immobile vacancies in dependence of mechanical stress. The surface of an evolving void is modeled by a three-dimensional level-set algorithm. Simulations have shown that the constellation of grain...
3D integrated circuit technology is an emerging technology for the near future, and has received tremendous attention in the semiconductor community. With the 3D integrated circuit, the temperature and thermo-mechanical stress in the various parts of the IC are highly dependent on the surrounding materials and their materials properties, including their thermal conductivities, thermal expansivities,...
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