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In this paper, viable transmission media technology has been demonstrated for the first time on GaN on low-resistivity silicon) substrates (ρ < 40 Ω·cm) at H-band frequencies (220–325 GHz). The shielded-elevated coplanar waveguide (CPW) lines employ a standard monolithic microwave integrated circuit compatible air bridge process to elevate the CPW traces above a 5-μm layer of benzocyclobutene on...
This paper describes the realization of high performance substrate integrated waveguides (SIVV) and components, and multilayer compact and high Q lumped elements and passives to complete mm-wave modules at a low cost using a novel multilayer ceramic based photoimageable thick film technology. The multilayer SIW shown to have lower loss compare to planer transmission lines at the higher side of millimeter-wave...
Dielectric resonator antenna (DRA) for millimeter wave applications is proposed in this paper. The proposed antenna is realized by a very low loss low-temperature co-fired ceramic (LTCC) technique that is well suited to integrate with a monolithic microwave integrated circuit. A T-slot-stub CPW feedline is employed to excite the DR, which is optimized the impedance matching of the antenna. The broadside...
The air-gap three-dimensional symmetric inductor is developed by using an MMIC air bridge approach to realize a suspended inductor. The proposed inductor has a very high quality factor achieving a Q factor of about 30 for a 2.4 nH air-gap symmetric inductor. This paper also presents a miniature semi-lumped low-pass filter composed of a cascade of the proposed elevated low-loss lumped inductors and...
The great flexibility of three-dimensional multilayer technology which newly developed spiral inductors have been designed and optimized. The chosen approach for the spiral implementation loaded is a coplanar wave guide (CPW) transmission lines. The multilayer spiral inductors are very compact and having resonant frequency band between 5 GHz to 70 GHz. The area of multilayer inductor is nearly four...
Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length were developed for the fabrication of submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 300 GHz and beyond. Heterostructures with very high electron sheet density of 6.1×1012 cm-2 and 9800 cm2/Vs electron mobility were grown on 4” GaAs substrates using a graded quaternary InAlGaAs...
A micromachining process has been developed to create high impedance and low loss high aspect ratio coplanar waveguide (HARC) on low resistivity silicon. The process uses silicon DRIE to create an array of tall mesas that are spaced with a precise pitch. The silicon mesa array is then merged into a single solid SiO2 mesa using thermal oxidation. The solid SiO2 mesa creates a wide dielectric for use...
In this paper, a process to fabricate BCB/Au multilayer stack on low resistivity Silicon (Si) based on the embedded package structure is developed, especially for the first time spin coating of the dielectric material on the Si substrate. Transmission lines, including micro-strip transmission lines and coplanar waveguide (CPW) lines are designed, fabricated and characterized, which performs excellently:...
This paper describes the first demonstration of a 76 GHz gallium nitride (GaN) power amplifier (PA) on a silicon substrate. The PA microwave monolithic IC (MMIC) was fabricated by using AlGaN/GaN FET with a maximum oscillation frequency of 160 GHz and a breakdown voltage of over 50 V. For reducing transmission loss, we used a CPW line on the silicon substrate with low transmission loss of 0.5 dB/mm...
In this paper, we present the development of an H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in next generation active and passive high-resolution imaging systems operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been realized by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron...
In this paper we propose a 3D micromachined 210 GHz elevated bowtie dipole antenna fed by coplanar waveguide. The antenna is designed for MMICs applications at G-band (140 GHz to 220 GHz). The antenna topology effectively creates a low dielectric substrate and undesired substrate effects can be eliminated, since the antenna substrate is essentially air (the lowest possible dielectric constant) and...
In this paper, we present the development of a compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation active and passive high-resolution imaging systems. The low- noise amplifier (LNA) circuit has been realized using an advanced 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and achieves...
This paper reports on a 60 GHz common base fundamental oscillator with ultra low phase noise realized in QUBIC4Xpsilas HBT technology. It uses a silicon micromachined cavity resonator which is mounted on a common MCM PASSI3I carrier and coupled to the MMIC. A novel feed approach is presented which uses a wirebond to couple the interconnecting CPW line to the KOH-etched silicon cavity of which the...
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