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An improved SiC MOSFET-gate driver integrated half-bridge module with folded layout using direct bonded copper (DBC) substrate is designed, fabricated, and tested. The bottom layer of the DBC is used as part of the power loop to achieve major reduction in the loop stray inductance. Due to the low parasitic inductance and capacitance, the gate resistor is chosen as zero to reduce the switching loss...
Silicone carbide (SiC) power devices have been optimized in performance over the past decade. However, wide industry adoption of SiC technology still faces challenges from system design perspective. This paper demonstrates an integrated air-cooled three-phase SiC power block for industry applications. The key design aspects, such as high performance gate driver, low parasitic layout, optimized thermal...
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