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Self-propagating exothermic reaction of Al/Ni multilayer film has been developed as a heat source with small heat region and high reaction rate in the field of bonding. In this paper, using this kind of localized and rapid heat source, solder preforms with different melting point such as SAC305 (217°C), Au80Sn20 (278°C) and A88Ge12 (356°C) have been applied to achieve the Si/Si bonding includes stacked...
In this study, passive alignment and mounting of lithium niobate (LiNbO3) chips, with a large mismatch in the coefficient of thermal expansion with most semiconductors, are demonstrated for hybrid-integrated optical devices. LiNbO3 chips were aligned passively using the visual index alignment method and were subsequently bonded on the Si substrates by low-temperature solid-state bonding with Au microbumps,...
Hybrid integration has been employed for most of the current market available silicon photonics. A novel modular packaging scheme, MEPIC-iMEP3, is proposed for rapid development and high flexibility. One of the critical modules in this packaging scheme is the multichip integration onto the i-MEP3 substrate for sub-micron accuracy. In this study, a series of specially designed test chips and test substrate...
High power vertical GaN-based light-emitting diodes (LEDs) on Si substrates are fabricated by wafer bonding and laser lift-off (LLO) technique. The GaN-based LEDs are grown on sapphire (0001) substrates by metalorganic chemical vapour deposition (MOCVD). GaN-based LEDs are joined to Si receptor substrates by Sn/Au fusion bonding at the temperature of 300 degC in flowing nitrogen ambient. KrF excimer...
This paper reports on the successful demonstration of a novel microfabrication method in which eutectic gold bonded microstructures are selectively electrochemically release etched. This method offers several advantages: both a strong permanent bond and a temporary bond is achieved on the same die, the footprint of the temporary bonded structures is allowed to be larger than the footprint of the permanently...
We report successful bonding of photodiodes on glass substrate using Au stud bumps by Au-Au surface-activated bonding at a relatively low bonding temperature of 150degC. A glass substrate with the flip-chip bonded photodiode chips was then vertically stacked on a Si substrate with the bonded laser diode chip using Au-Au surface-activated bonding. Applying this technique, compact and thin optical microsensors...
As the growing demand for high-density electronic applications, a novel COF package with sidewall-insulated Au-coated polyimide (PI) compliant-bumps using a double- layer ACA that can meet the assembly requirement is thus developed for ultra-fine pitch interconnects in this work. The reliability of the ACA-bonded COF package with 20 mum pitch using both Au-bumps and compliant-bumps is examined, respectively...
In order to solve the pressure measurement problem in the harsh environment, such as high temperature above 200degC, a special piezoresistive pressure sensor chip has been developed. Based on the MEMS (micro electro-mechanical system) and SIMOX (separation by implantation of oxygen) technology, the piezoresistive pressure sensor chip was constituted by silicon substrate, a thin buried silicon dioxide...
Thin film edge emitting lasers with top/bottom stripes are broad area metal/metal bonded to a Si substrate. The bonding and top/bottom stripes are steps forward toward better heat dissipation, current confinement, and mechanical bonding strength.
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