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Through Silicon Via (TSV) was original proposed for the three-dimensional (3D) IC packaging and now is realized in the high band width DRAM (HBM) application. TSV is also utilized in a passive silicon interposer and the insertion of such interposer into a flip chip packaging created another packaging platform commonly known as 2.5DIC for high density multiple ICs integration. However, since the 1st...
3D Integration is a promising and attractive solution for interconnect bottleneck problem, transistor scaling physical limitations, and impractical small-scale lithography. 3D integration extends Moore's law in the third dimension, offering heterogeneous integration, higher density, lower power consumption, and faster performance. However, in order to fabricate 3D ICs, new capabilities are needed:...
As microelectronic applications and technologies are getting more demanding, it is being demonstrated that the 3rd (vertical) dimension on wafer-processing technology is enabling applications and products with higher performance. Approaching the 3rd dimension in wafers is actually considered and realized through emerging TSV (through silicon via) technology and thinned wafers at the same time. Thin...
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