The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
University of Padova in collaboration with Panasonic Corp. has developed in the recent years an in depth reliability analysis of Blu-Ray InGaN Laser Diodes (LD) submitted to CW stress at different driving conditions. The reliability analysis has been focused towards a) the identification of the effects of current, temperature and optical field and b) the identification of the physical mechanism related...
This paper describes an analysis of the reliability of GaN-based laser diodes, submitted to constant current, constant optical power and high temperature stress. We demonstrate that constant current and constant optical power stress induce the increase of the threshold current of the devices, that varies according to the square-root of time. The threshold current increase is found to be strongly correlated...
The low frequency noise (LFN) properties are investigated on the high power 808 nm InGaAsP/GaAs quantum well (QW) laser diodes under low bias current (10-6~10-3 A) in order to estimate the current leakage of semiconductor lasers. For the first time, we investigate the LFN peak under very low bias current. After a short time electrical aging (50 or 150 hours), the right-shifted position of the LFN...
We have developed the first 1.3-mum AlGaInAs-MQW-FP-LD with Ru-doped InP buried heterostructure by narrow-stripe selective MOVPE. SIMS measurements revealed that the Ru-doped InP suppressed Zn diffusion from Zn-doped InP in comparison with Fe-doped InP. The LD operates up to 170degC. 10-Gb/s operation up to 120degC and more than 3500-hour reliability under 85-degC APC test has been successfully achieved
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.