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Two dimensional Poisson-Schrödinger equation is solved numerically in depletion-all-around (DAA) operation of n-channel four-gate transistor (G4-FET) by finite element method using COMSOL with MATLAB. Ballistic drain current is calculated by mode-space approach using modified Tsu-Esaki equation. Effect of multiple gate bias on current-voltage characteristics is observed.
A numerical model is developed for solving two dimensional Poisson-Schrodinger equation in depletion-all-around (DAA) operation of n-channel four gate transistor (G4FET) by finite element method using COMSOL with MATLAB. The results from this model can be used to calculate ballistic drain current by mode-space approach. Potential distribution, conduction band profile, eigen energy profile and wave...
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