The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The suitability of the compact model HICUM for a state-of-the-art Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology is evaluated with special emphasis on an efficient scalable modeling methodology. Multifinger HBTs particularly applicable to power applications are modeled. For modeling the critical self-heating effect a distributed thermal network is applied, yielding only...
Arbitrary-load-dependent X-parameters, automatically measured with a load-tuner working with an NVNA, are used to characterize and model a packaged 10W GaN transistor. A full nonlinear two-port functional block model for PA and other circuit design is immediately available for nonlinear simulation. It is demonstrated that the model predicts well the independent effects of harmonic load tuning without...
Power transistors basically consist of a number of active transistors that are mounted in parallel inside the package. High powers require large transistor sizes, which translates into significant physical dimensions. For circuit design, on the other hand, a lumped model is favorable for sake of simulation speed and numerical convergence. This paper addresses questions related to reducing the equivalent...
The efficient modeling of unijunction transistor (UJT) is an burning issue in power industries. The available SPICE based model provides V-I characteristic of UJT. The output characteristic of UJT is nonlinear in nature and its modeling plays an important role in many applications where the output voltage of UJT drives any other device or circuit. In this paper a nonlinear device model is proposed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.