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In this paper, on-wafer de-embedding methods for passive components are evaluated for millimeter wave integrated circuit (MMW IC) design support. An electromagnetic simulation aided de-embedding (EMSAD) technique is proposed. The electromagnetic model is calibrated by matching the open-short de-embedded measurement at relatively lower frequencies. A set of Ground Coplanar Waveguide (GCPW) test structures...
We propose a built-in test circuit to detect resistive open defects occurring at interconnects between dies of 3D ICs. The test circuit consists of an I-V converter and a comparator of offset cancellation type. Feasibility of the tests with the circuit is examined by SPICE simulation. It is shown that resistive open defects of 5Ω and above can be detected per 240nsec under process variations of MOSs...
In radio frequency (RF) circuits the lumped model assumptions are often not valid anymore. To circumvent this problem, mixed-level circuit/electro-magnetic/device simulation allows the use of Maxwell's and semiconductor equations for the critical devices and lumped models for the ambient circuitry. Besides AC, DC, periodic steady state and transient analysis, the multirate partial differential equation...
This work presents a GaN RF power amplifier with a common-source-common-gate (CS-CG) linearization technique, demonstrating device-circuit interactions using the physics-based MIT Virtual Source GaNFET (MVSG) model. A few device parameters are carefully chosen to investigate their effects on the circuit performance, as well as to suggest how to fabricate or choose a better GaN device for RF power...
A modeling method for RF power transistor fingers and large discrete die is presented in order to evaluate, visualize, and optimize various performance parameters at the device finger level. The model is constructed using a combination of TCAD based active die model and passive interconnect models based on Wheeler's transmission line formulation. Active die model of a fraction of the total periphery...
RF probe measurements are widely used for characterizing circuits in the millimeter-wave frequency range. Especially above 200 GHz the large dimensions of the RF probe, in comparison to the wavelength, lead to parasitic effects which will effect the device under test. Since the measurement is influenced by the electro-magnetic coupling between probe tip and the test structures on the substrate, the...
In this paper, a non-orthogonal multiple access cognitive radio network with simultaneous wireless information and power transfer is studied under a practical non-linear energy harvesting model. A multi-objective optimization problem(MOOP) is formulated to maximize the harvesting power of each energy harvesting receiver. This problem is non-convex and challenging to be solved. The weighted Tchebycheff...
A reliability study under high RF power stressing was conducted on two SiGe cascode Low Noise Amplifiers (LNA) using an in-house reliability tool. The first LNA was stressed at 19 dBm of RF power during 600 hours. Obtained results (relative degradation values in dB) showed a decrease of 11% in the small-signal gain (S21), while the second was stressed at 20 dBm of RF power during non-stop 600 hours...
In this paper, an automatic parameter extraction and scalable modeling method for 1∼100GHz transmission line based on the equivalent-circuit model proposed in [1] is established. The parameters are extracted from electromagnetic simulations which are validated by the measurement date of the devices fabricated on HLMC 40nm RF CMOS process. This method is validated by application to scalable modeling...
RF CMOS technology provides a platform for the production of analog, digital and RF circuits on a single chip for futuristic high-level integration. This facilitates the need for a robust compact model for RF FinFETs to study the circuits in a precise and convenient way. In this paper, we have characterized 14-nm N-channel bulk FinFETs by performing two-port S-parameter measurements. Further, BSIM-CMG...
The paper describes the implementation of optimization routines, in the APLAC programming language to optimize a RF MEMS (Radio Frequency Micro Electromechanical Systems) capacitive switch. The optimization methods were applied to complete the goals in the static regime. The focus of the paper was to create efficient, fast and robust routines for material and geometric optimization of the device....
This paper reports a 20 W Ka-band GaN high power MMIC (Monolithic Microwave Integrated Circuit) amplifier under continuous wave (CW) operation. The one-finger large signal models were made to take account of both the phase difference of RF gate voltage at a gate feeder and thermal effect. By using this model, the gate pitch length of unit cell transistor was optimally designed to obtain maximum output...
This paper concentrates on the modeling of an in-line MEMS (microelectromechanical systems) frequency discriminator which is applied to the RF (radio frequency) receiver front-ends. In addition to the frequency detection of the RF signal, the resonant frequency of the VCO (voltage controlled oscillator) can be tuned through the output dc thermal voltage generated by the in-line MEMS frequency discriminator...
In this contribution, impact of extreme environmental conditions in terms of energy-level radiation of protons on SiGe integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas) and non-linear (Low Noise Amplifiers) are used as carriers for assessing impact of aggressive stress conditions on their performances. Perspectives...
Physical and electromagnetic modelling of double barriers InGaAs/AlAs resonant tunneling diode has been carried out using 9 μm2 mesa devices with a peak current density of 1.2 mA/μm2 integrated with a coplanar waveguide resonator. A 100 GHz oscillator was realized and achieved an output power of 100 μW through exploiting the negative differential resistance feature of the diode. Validation of the...
The electromagnetic immunity of an operational amplifier in the non-inverting configuration is characterized using the direct power injection (DPI) standard. The amplifier is driven by the functional input signal and the radio-frequency (RF) disturbance signal that is injected into the output pin. The output reflection coefficient in the large-signal conditions is calculated from the time-domain simulations...
This paper describes the results of evaluation and simulation modeling of the influence of a silicon substrate propagation disturbance on circuit operation in silicon-on-insulator BCD (BIPOLAR/CMOS/LDMOS) process. In the evaluation, the susceptibility of the Widlar bandgap voltage reference (BGR) to a disturbance propagating from the substrate is measured by direct RF power injection tests in the...
The impedance of series pairs of 18650 format cylindrical lithium ion battery cells has been measured over the frequency range from 100 kHz to 200 MHz using a vector network analyser, and simulated using a full-wave 3D field solver. The results indicate that a hybrid simulation approach, based on a simple 3D model coupled with an equivalent circuit model derived from measurements on a single cell,...
Graphene FETs have gained rapid popularity after recent successful attempts at fabricating these devices on a Silicon substrate, along with capabilities of mass reproduction. A popular application of such devices is the single transistor RF mixer, which is capable of operation in the GHz range. In this paper, we present a novel configuration of Graphene FETs that can act as an averaging circuit simultaneously...
Look-up table (LUT) models have been demonstrated to work well for predicting waveforms in circuits that show memory induced, nonlinear behavior. Although, for circuits with deep memory, the models become impractically complex. This work addresses that issue by purposing a method to reduce the memory demand of such models. It is accomplished by grouping model entries according to their dependency...
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