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We compared to the characteristics of fabricated AlGaN/GaN HEMTs on a Si substrate with conventional ohmic contact and improved ohmic contact. In conventional ohmic contact with metal scheme of Ti/Al/Ni/Au or Ti/Al/Ti/Au, generally ohmic contact resistance is good but, surface topography has bad morphology due to ball-up by low Al melting point at high temperature RTA over 800°C. In order to improve...
Low resistance Ti/Al/Ni/Au Ohmic contact to (NH4)2Sx treated n-type GaN has been studied in the temperature range from 25??C to 600??C It is found that the specific contact resistivity ??c of the sample treated with (NH4)2Sx solution for 5 min at 90??C decreases with increasing measuring temperature, while the ??c of the sample treated with (NH4)2Sx solution for 25 min at 90??C increases with increasing...
To improve the performances of ohmic contacts for GaN devices, a novel multilayer Ti/Al-based metal scheme (Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au) on undoped AlGaN/GaN heterostructures was employed. A contact with ??c (specific contact resistance) of 8.74E-07 ????cm2, Rc of 0.22 ????mm was demonstrated. Ohmic contacts with the novel metal structure were measured with I-V, SEM, HRTEM to show their properties...
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