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This paper presents a Cylindrical GAA TFET based on germanium source for low power applications. The proposed device used the merits of low band gap material such as germanium, which is used as a material in the source region. Device investigations have been made in terms of DC characteristics like ION, IOFF, SS, ION/IOFF. The proposed device increases ON-current as high as 1.9 × 10−5 A/μm, which...
The U.S. Department of Energy's Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced...
The homogeneous broadening in Phosphorus doped Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter rHOM=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4.
In order to achieve high-efficiency solar cells, a tandem structure with perovskite and silicon solar cells was introduced and concerned, recently. However, it was difficult to form perovskite top cell on “textured” silicon solar cell due to the in homogeneity layer of perovskite top cells by solution process. In this work, therefore, in order to combine perovskite solar cell as a top cell and “textured”...
The main objective of this paper is to increase the power conversion efficiency by effective solar spectral band splitting. This is attained here by cascading semiconductor materials of varying energy band gap arranged in the decreasing order. In addition, an efficiency of a multijunction solar cell can be improved by current and lattice constant matching of the cells. Accordingly, a multijunction...
Almost all electronic circuits require a reference, be it voltage, current, or time. A well-designed reference is expected to provide a “stable” point that will be independent of the potential variations in its operating conditions. While there has been decades of extensive amount of creative work in the world of reference design, with the emergence of new applications, reference designers are now...
Photovoltaic (PV) technology development is dominated by the largest application, utility-scale energy generation. Although military PV applications share some of the same attributes as those for utility-scale PV, the Navy PV technology development is focused on filling the gaps between what exists for utility energy generation and specific military applications. In this paper, we discuss the unique...
Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into microdisks and strained using silicon nitride stressors. The strained disks are measured to be tensile by Raman spectroscopy, and demonstrate direct bandgap emission in the 3–5 μm gas sensing window.
We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloy operating at mid-infrared wavelengths. Enhancement of the Franz-Keldysh-effect by confinement of the applied electric field to GeSn in a reverse-biased junction results in 3.2dB insertion losses, a 35GHz bandwidth and a 6dB extinction ratio for a 2Vpp drive signal.
In this presentation we will demonstrate how it is possible to compute properties of Sii-xGex alloys, using modern first-principles approaches which provide values for the band gaps in the entire range 0 ≤ x ≤ 1, as well as effective masses for Si and Ge (also when strain is applied) which all are in excellent agreement with experiments. These benchmarks show that appropriately chosen DFT methods...
By simultaneously considering the enhancement of quantum confinement on the effective bandgap and minimum transition energy, the silicon (Si)/ silicon carbide (SiC) quantum dot superlattice (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation layer shows the high short-circuit current (Jsc) of 4.77 mA/cm2 in theoretical, which agrees with the Jsc of 4.75 mA/cm2 obtained in the experiment under...
The bandgap reference circuits are very sensitive to electromagnetic interferences (EMI) which induce voltage offset on their outputs. Two bandgap chips with different technologies are designed for EMC study. The conducted immunity of VDD and VSS pins are tested following direct power injection (DPI) method. The aim of this study is to compare the susceptibility characteristics of same bandgap circuit...
We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical...
In this work it is showed that compressively strained Ge1−xSnx/Ge quantum wells (QWs) grown on a Ge virtual substrate are very promising TE mode gain medium. Moreover we show how emission wavelength and polarization can be controlled in Ge1−wSnw/SiyGe1−x−ySnx QWs. Demonstration of capabilities of presented QW systems bases on analysis of transverse electric (TE) and transverse magnetic (TM) modes...
We present a variational study of direct transitions in GeSn/Ge quantum well system for photonic applications. The exciton radiuses, binding energies, and oscillator strengths are calculated for various Sn contents are calculated and discussed.
In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorganic perovskites, which have recently demonstrated large efficiencies with low production costs, we examine the possibility of using the same perovskites as absorbers in a tandem solar cell. The cell consists in a methyl ammonium...
This work investigates performance of strain balanced SiGeSn/GeSn multi quantum well infrared photodetector by numerical analysis. Expression of responsivity is obtained by solving rate equation and continuity equation at steady state considering carrier transport mechanism across multiple well-barrier interfaces. The result shows a significant responsivity is achieved in mid-IR wavelength region...
The effect of silicon quantum wires (SiQWs) diameter of heterojunction solar cells based on SiQWs with rectangular cross sections and graphene (SiQWs/G) is investigated using a coupled optical and electrical model. It is found that SiQWs/G with small cross section area (d2=4 nm2) shows high efficiency. because, the band gap of SiQWs obtained from the distance of energy state of wave function of the...
A dual-nanowire heterostructure with a GeSn layer laterally laying on Ge nanowires is demonstrated by MBE. The strain field analyzed by FEM shows that the novel proposal can significantly release the compressive strain in GeSn for potential direct bandgap conversion as a Si-based light source.
For the near-infrared (near-IR) optical data communications, silicon photonics became a mature technology. Building on the technological developments associated with datacoms, silicon photonics now expands into the mid-infrared (mid-IR), mostly for the optical gas sensing. Here as well, the development is hampered by the absence of monolithically integrated laser sources compatible with the CMOS fab...
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