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This paper investigates the use of stacked depletion-mode n-channel MOSFET (D-MOS) for RF switch applications. Compared to the commonly used enhancement-mode MOSFET (E-MOS), the D-MOS transistor offers a significant reduction in on-state resistance (RON) and off-state capacitance (COFF) simultaneously and an excellent figure of merit (RonX Coff) of 134fs (roughly 3X improvement) can be achieved. With...
This paper researches an ultra-wideband RF MEMS Single-Pole-Four-Throw (SP4T) switch with four shunt-configured, resistive-contact, MEMS cantilever switches. Detailed design and synthesis procedure are provided and the proposed SP4T switch is implemented. The simulated and measured results, where an excellent agreement is obtained, show that an insertion loss is less than 0.8dB and the return loss...
This paper deals with the susceptibility to radio frequency interference of smart power integrated circuits. A method to perform simulations aimed at evaluating the performance of subcircuits included in a more complex IC in the presence of EMI is presented. Referring to this, the behaviour of a current sensor included into a high-side power switch during DPI test is investigated. The results of simulation...
A novel birdcage type Radio Frequency (RF) receiver coil sensor with passive type detuning circuits integrated on the end-rings of the coil sensor has been implemented. A simulation model of the RF receiver coil sensor with the passive type detuning circuits has also been proposed. The simulation model completely explains the working principle of the RF receiver coil sensor with the passive type detuning...
In this paper, a PWM control strategy of SRM is briefly introduced at first, and then there follows the analysis of ideal flux model by that strategy. An excellent and reliable driver circuit is strongly needed to maintain a normal operation of SRM, and IR2110 is a good choice to ensure accurate switching operation of power electronic devices. A new form of peripheral circuit of IR2110 is suggested...
The potential application of Defected Ground Structure (DGS) for isolation improvement of series discrete PIN diode switch is proposed in this paper. A square dumbbell DGS was selected for this application where it was connected in parallel with a single series discrete PIN diode. By realizing the circuit using FR4 substrate, the simulated and measured result clearly show that the isolation of the...
This paper presents an overview of the co-design technique for broadband RF ESD protection circuit designs. The unique mixed-mode ESD simulation design methodology allows full-chip design optimization and prediction of broadband RF ICs with full low-parasitic ESD protection, which were validated experimentally using ultra wideband (UWB) RF ICs and RF switch circuits in CMOS technologies.
An improved CMOS large-signal model including the substrate/triple-well characteristics has been proposed for the application in high power-handling of CMOS RF switch circuit. In order to establish a NMOS transistor model in RF switch application, two types of test devices, series- and shunt-type NMOS transistors, have been designed and fabricated by using a standard CMOS 0.18 µm technology. Based...
An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25 ??m BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin film membrane into account. The pull-in voltage and the capacitance values obtained with the mechanical model agree very well with the measured values...
In this paper, two track and hold circuits are designed and implemented using 65 nm CMOS technology. The first circuit is based on a dummy switch topology to decrease the charge injection error. The second circuit uses a clock linearization technique to reduce the sampling instant inaccuracy. Simulation results show that the track and hold circuit based on dummy transistor technique presents the best...
The cellular mobile communication industry has recently been one of the fastest growing industries. This paper presents efficient techniques in the design of switching mode class E power amplifiers by reducing switching losses. A typical class E circuit has been design-optimized for 900 and 1800 MHz. Matching networks are used to reduce power consumption. The simulated results were analyzed in terms...
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