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A new design approach achieving very high conversion efficiency in low-voltage high-power isolated boost dc-dc converters is presented. The transformer eddy-current and proximity effects are analyzed, demonstrating that an extensive interleaving of primary and secondary windings is needed to avoid high winding losses. The analysis of transformer leakage inductance reveals that extremely low leakage...
In this paper, the structure of a power UMOSFET ACCUFET has been investigated. For a given device length when the number of trenches is increased transconductance increases as the cut off frequency does. The effect of such a design on the conductance of the device is investigated and demonstrated that the conductance of this device can be improved by as large as 600% at the gate and drain voltage...
In summary, high-voltage 3300 V, 30 A 4H-SiC DMOSFETs are demonstrated. The device can conduct over 30 A at a power dissipation of 200 W/cm2 in the on-state and block over 3300 V with a VGS of 0 V in the off-state. The devices exhibit normally-off characteristic. More data including dynamic switching performance of the DMOSFETs will be presented at the conference.
In this paper, experimental SiC MOSFET devices have demonstrated high-temperature static operation with low on-state conduction loss and off-state drain leakage current. Double-pulse clamped inductive load tests are used to characterize the switching performance of SiC MOSFET devices.
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