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RF magnetron sputtering gas pressure and substrate temperature on Al-doped ZnO (ZAO) thin film optical performance has important implications. Al-doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering technology. We realized ZAO films with the better performance by adjusting and optimizing the sputtering gas pressure and substrate temperature. Using UV-vis spectrophotometer tested the...
This paper presents field electron emission current density of the hydrogen plasma treated nano-ZnO thin films. The surface morphology, microstructure and surface resistance of nano-ZnO thin films deposited on Mo layer are characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive spectrum (EDS) and surface resistance meter.
In this work are discussed the technology for preparing and characterisation of indium-tin oxide (ITO) and ITO with titanium oxide underlayer thin films with properties appropriate for usage at elevated temperatures as heat reflective coatings and gas sensors. For preparing the samples the methods of radio frequency (RF) and DC-magnetron reactive sputtering were used. Sputtering of indium-tin and...
We synthesized undoped and Mn-doped ZnO films on glass substrates using the sol-gel technique. The micro-structure, morphology and optical properties of ZnO films were studied by using X-ray diffraction, Atomic Force Microscope and UV-visible transmission spectra. After annealed at a temperature lower than 550°C by Rapid Thermal Processing (RTP), all the ZnO films are polycrystalline with a hexagonal...
We have investigated the properties of Mn-doped ZnO nanocrystalline films grown on zinc foil by hydrothermal method. The microstructure, optical and magnetic properties of these films have been characterized by SEM, XRD, XPS and UV-vis spectrum. The XPS spectra show the doping manganese exists as Mn2+. From UV-vis spectra, the shift in band gap and greater reflectivity can be observed due to Mn doping...
Polycrystal 3C-SiC films have been grown on Si/SiN structures via atmospheric pressure chemical vapor deposition (APCVD) process with a SiH4-C3H8-H2 reaction gas system. The change of SiN microstructure during high temperature pretreatment, and its effect on the crystallinities of SiC growth films were measured using SEM and XRD. Experiment results show that high temperature pretreatment of substrates??...
We deposited ZnO thin Alms on single-crystal p-type Silicon <100> substrates by direct current (DC) magnetron sputtering method. The ZnO thin films deposited at room temperature by DC magnetron sputtering were annealed, when powers were 60, 90 and 120W, and temperature were 400, 500, 600 and 700 degC respectively. Analyzed microstructure of the ZnO thin films by X-ray diffraction (XRD).Observed...
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