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Compared with single-side cooling inverter, double-side cooling inverter is more advantageous for the application of electric vehicle in terms of efficient cooling performance, mechanical robustness and high power density. IGBT short-circuit fault is one of the detrimental factors to cause the whole inverter failure. From the perspective of inverter, this paper analyzed the fault condition of single...
An overview on the history of the development of insulated gate bipolar transistors (IGBTs) as one key component in today’s power electronic systems is given; the state-of-the-art device concepts are explained as well as an detailed outlook about ongoing and foreseeable development steps is shown. All these measures will result on the one hand in ongoing power density and efficiency increase as important...
In this paper, a hybrid switch (HyS) consisting of a large silicon (Si) IGBT die in parallel with a small wide bandgap (WBG) die is proposed for generic power conversion drives. This HyS produces an inherent better conduction performance compared to the Si IGBT and WBG. A gate control option is recommended for minimum switching losses and switching frequency as high as 78 kHz can be achieved in HyS...
This paper presents a junction temperature estimation model for space vector modulated IGBT inverter system for a real time implementation. Advances in power electronics, control systems, motor drives, and electrical machines helped in developing new technologies of Variable speed constant frequency (VSCF) system for more aircraft application. It is estimated that about 21% of the faults in the variable...
Loss is a very important parameter in the analysis of the power electronic systems, and accurate calculation of this parameter directly effects on the economic and technical evaluation. Junction temperature, heat-sink sizing and cooling system, failure rate and MTTF1 are some examples of the basic parameters in designing a multilevel inverter, which all depends on the loss. Through previous methods,...
The Active NPC VSC (3L-ANPC-VSC) features a higher degree of controllability than standard NPC converters, allowing a better temperature distribution among the semiconductors. With the aid of a Predictive Control strategy, a new temperature balancing method for the 3L-ANPC-VSC is introduced. The algorithm is implemented in Matlab and compared with the 3L-NPC-VSC using experimental data of 4.5kV Press-pack...
In the low voltage converter range, 3-phase 3-level VSC topologies are not wide spread in industry because of the increased part count and higher costs, although they are more efficient for higher switching frequencies. In this paper an alternative 3-level topology referred to as T-type is presented, which is very high efficient for medium switching frequencies (4-20 kHz). Additionally, it is shown...
This paper presents a novel control strategy, on the example of a three-phase voltage source inverter, to increase the life-time of power semiconductor devices. Based on an online estimation of the junction temperatures the switching frequency is modified through the control to decrease thermal cycles. In addition the neutral point potential can be shifted using a flat-top method, resulting in an...
Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics the switching and conducting performance of a SiC-JFET and a SiC-BJT are investigated and compared to a state of the art Si-IGBT. The power losses, the switching times and the efforts for the driving circuits are investigated. The focus is put on the influence...
IGBT is one of the key components of motor driving system for electric vehicles, and its reliability directly affects the reliability of the electric vehicles. The reliability of the IGBT is affected by the loss and the junction temperature in working condition. To predict the IGBTpsilas loss and thermal response, especially in the case of adverse dynamic conditions, the dynamic loss model and the...
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