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Novel nonvolatile universal memory technology is essential for providing required storage for nano-computing. As a potential contender for the next-generation memory, the recently found “the missing fourth circuit element”, memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations that assumes constant ion mobility, we develop a comprehensive...
Distributed effects may appear in active devices in mm-wave CMOS integrated design. In this paper we have analyzed the distributed effects in the intrinsic MOS transistor. Non-quasi static effect has been reviewed and its importance in mm-wave band has been demonstrated by simulations in the foundry design kit for STMicroelectronics 90nm CMOS technology. The distributed effect of MOS transistor has...
In this paper, design and characterization of a 18 V switched-capacitor CMOS interface circuit for the closed-loop operation of a capacitive accelerometer is presented. The pendulous silicon accelerometer operates in atmosphere pressure and is designed for non-peaking (low-Q) response with a sensitivity of 0.5 pF/g without vacuum packaging. Test results shows that a full scale acceleration of plusmn15...
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