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The proposed work explains the absorption property of different material which can be used for the formation of Quantum Dot and their use in solar cells. By using property of Intermediate Band Gap of Quantum Dot efficiency of solar cells can also be increased. Along with it, it's found that absorption of Quantum Dot Depends on the angle by which light falls on them and in most of the cases its maximum...
According to the Bloch theorem and the symmetry of superlattice configuration, a new 3D finite element method is employed to calculate the miniband structure and density of state for well-aligned Ge/Si QDs array. This method can overcome the approximation of multi-dimensional Kronig-Penny model and constrain on QDs superlattice structure. The interaction of electronic structure among Ge/Si QDs with...
In this work, an efficient method is applied to calculate the miniband structure and density of states for well-ordered Ge/Si quantum dot (QD) array fabricated by combining the self-assemble bio-template and damage-free neutral beam etching. Within the envelop-function framework, this computational model surmounts theoretical approximations of the multi-dimensional Kronig-Penney method and the numerical...
This paper investigates the applications of nanocrystalline semiconductors, and in particular silicon nanostructures, in the areas of integrated photonics and photovoltaics. The fundamental principles, properties, and performance advantages resulting from the incorporation of nanostructures in photovoltaic and photonic devices are examined. Several device structures as well as fabrication and characterization...
The work discussed here focuses on the integration of InGaAs Stranski-Krastanov type quantum dots within a GaAsP metamorphic photovoltaic material matrix via molecular beam epitaxy. Two basic parameters, growth rate and substrate temperature, were studied to determine the nucleation behavior on the GaAsP surface, followed by exploratory growths of encapsulated quantum dot multilayer structures on...
Superlattice consisting of 10 alternate layers of a-Si with QDs and SiNx are incorporated as i-layer in a p-i-n solar cell using HWCVD method. Superlattice with QDs showed absorption coefficient in the range of ∼105–104 cm−1. Calculated optical bandgap of the SL with QDs (∼1.84 eV) is higher than the SL without QDs (∼1.79 eV) and this is attributed to QCE. The cells with QDs showed ISC= 1.806 µA and...
The optical and electrical properties of silicon quantum dots are calculated using effective mass theory and tight binding method. The bandgap and intersubband gap energies as well as the tunnelling transmission probability of silicon quantum dots embedded in an amorphous silicon nitride are calculated for different Si/N ratios. Optical absorption spectra are calculated using tight binding method...
In this work we calculate the electron band structure of a silicon periodic nanostructure embedded into SiO2 and describe the computational implementation we used for this purpose. Further, we discuss the influence of nonparabolicity of electron silicon band structure in the dispersion relation of the periodic nanostructure.
We use a patterned conformal deposition technique to fabricate Si-based 3D optical microcavities. The size-dependent confined photonic modes were observed when the size is reduced to 1.0 mum which is similar to the quantum effect of electronic states in semiconductor quantum dots.
The tandem stack of cells is one of the promising approaches for using a full solar spectrum and improving solar cell performance. By restricting the dimensions of silicon to less than Bohr radius of bulk crystalline silicon (~5 nm), quantum confinement causes its effective bandgap to increase. Therefore silicon quantum dot superlattice can be a good candidate for realizing all silicon tandem solar...
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