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In this paper, a resonant switched-capacitor dc-dc converter is proposed for data center application. The proposed converter possesses features such as high efficiency, high power density and light-weight. Zero current switching (ZCS) can be achieved with the resonant operation, which allows the converter operating under high efficiency. Proper switching device selection and in-depth power loss analysis...
Embedded grids have been increasingly adopted into applications such as More Electric Aircraft where different power converters are interconnected to each other. Interactions between the grid components poses the risk of instability to the system, more so when in the presence of reduced passive filters. An approach of automated and scalable tuning of such embedded grids with consideration for the...
The modular multilevel converter (MMC) is attractive for medium-or high-power applications because of the advantages of its high modularity, availability, and high power quality. Reliability is one of the most important challenges for the MMC consisting of a large number of submodules (SMs). The capacitor monitoring in each SM of the MMC is an important issue, which would affect the performance of...
Metal-insulator-semiconductor capacitors used as a RC snubber attenuate voltage overshoots which may occur during switching phases. These devices feature good temperature stability up to 200°C and can be integrated very close to power switches on the same transfer substrate. As the capacitors need to withstand high voltages in most applications, thick dielectric layers have to be used, causing significant...
In this paper, the design of a multi-layer laminated busbar for a Si and SiC hybrid switch based 100 kW three-level T-type, single-phase, power electronics building block is presented. Due to the absence of three-level T-type topology in WBG based power modules at this power level, the PEBB design along with the busbar design is novel. This busbar facilitates the interconnection between the DC-link...
This paper presents Direct Power Control (DPC) based on instantaneous power theory is presented. The simulation of a grid connected five level inverter via an inductive filter with a new direct power strategy is used. However, this control method is similar to the classic DPC method, in which used triangles instead of the sectors. Furthermore, the regulation of DC link without interfering the hysteresis...
Charge trapping properties of Al-ZrO2/Al2O3/ZrO2-SiO2-Si structures were investigated in attempt to elucidate the instability in their C-V hysteresis. The hysteresis in these structures is mainly due to subsequent trapping of electrons and holes injected from the Si substrate. However the competitive process of electron injection from the gate accompanied by the high leakage introduces instability...
The U.S. Army Research Laboratory (ARL) and Wolfspeed developed silicon carbide (SiC) vertical MOSFETs for linear-mode operation. The motivation is to determine whether SiC's material properties enable SiC MOSFETs to withstand higher pulse-current density and energy dissipation than is achievable with commercial silicon linear-mode MOSFETs. The SiC device is a 3.3 mm × 3.3 mm chip with a thick gate...
Ferroelectric hafnium oxide (HfO2)attracted a lot of interests since its discovery in 2007. Its scalability and CMOS compatibility are two advantages over conventional ferroelectric materials, favoring new device integration. Doped ferroelectric HfO2 Metal/Insulator/Metal capacitors have been widely studied for DRAM and FeFET applications. Silicon electrodes have not been discussed in much detail...
This paper investigates the benefits of using high-voltage converter cells for transmission applications. These cells employ ultrahigh-voltage SiC bipolar power semiconductors, which are optimized for low conduction losses. The Modular Multilevel Converter with half-bridge cells is used as a test case. The results indicate a reduction of converter volume and complexity, while maintaining low losses...
Ferroelectric RAM (FRAM) is a non-volatile memory with fast, low power, high endurance, read and write operations. Hence, this technology remains an attractive choice for embedded system solutions. In this paper, we analyze Si data that initiated the effort to design a compensated Sense Amplifier (SA) with improved input offset-sigma. We evaluate the cost vs benefit tradeoffs associated with this...
Based on the requirement of IPD RF SIP application, the silicon based inductor and capacitor and rules have been studied at first. Meanwhile, a two-order silicon-based 2.4GHz bandpass filter with the size of 1.8mm*1.8mm was obtained by the combination of inductances and capacitors. The insertion loss at 2.4GHz is −1.35dB. Furthermore, to improve the selective of the bandpass filter, one transmission...
Wide bandgap (WBG) semiconductors can be used at high switching frequency and have a high breakdown voltage and high junction temperature rating which make them appealing for use in power conversion. This paper sets forth a rigorous multi-objective optimization based design paradigm for a DC generation system. Using this paradigm, the loss versus mass trade-off (i.e. Pareto-optimal front) of the generation...
In this paper, a 400kHz high-frequency dual-buck inverter is fabricated for the applications of small scale renewable energy generation. A systematic calculation method for the converter's loss distribution is proposed to evaluate the efficiency. This method concerns the impacts caused by the high frequency on the loss distribution, which are always neglected by the traditional method. In the last,...
An internal paralleled active neutral point clamped converter (IP-ANPC) is presented in this paper. Advantages of the IP-ANPC converter include modularity, reliability and efficiency improvement, capability of interleaving, and better utilization of wide band-gap (WBG) devices. To simplify the operation of the IP-ANPC converter and provide an easy interleaving solution, a logic-based flying capacitor...
Graphene barristor, in which a Schottky barrier formed between graphene layer and silicon layer can widen the bandgap with the control of gate voltage, is a promising method to enhance on/off current ratio in digital circuit design. In this work, a theoretical study is presented based on analog behavior modeling in SPICE. We have developed a compact device model to evaluate the performance of graphene...
Molybdenum disulfide (MoS2) is a layered two-dimensional (2D) semiconducting material with a band-gap ranging from 1.3 eV in bulk to 1.88 eV in mono-layer [1]. This transition metal dichalcogenide (TMD) is being studied as a potential material for nanoelectronics and optoelectronics [2], [3]. Most of the research on electronic devices based on MoS2 published so far is naturally focused on lateral...
The subthreshold swing (SS) in MOSFETs is limited to 60 mV/dec change in drain current at room temperature by the Boltzmanr distribution of carriers, thus limiting its operating voltage (VD>SS×log Ion/IOFF). Ferroelectric FETs can achieve sub-60 mV/dec by harnessing the negative capacitance (NC) effect in a Ferroelectric (FE) material, thus enabling low voltage operation [1]. Previous works have...
The wind power converter alternative evaluation is a key aspect in decision making process in wind energy conversion system (WECS) planning and design. This work developed the life-cycle cost analysis (LCCA) model for wind power converter with a case study on a 2 MW system considering two semiconductor device alternatives: silicon (Si) devices and silicon carbide (SiC) devices. The developed LCCA...
Silicon interposers are frequently used in memory and network processor systems to closely integrate multiple chips and improve the performance of high-speed systems. The proximity provided by silicon interposer greatly improves bandwidth, power, and latency by simplifying communication and clocking of the links. However, the design of silicon interposer systems poses new challenges in managing the...
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