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Tb3+ doped Y2O3 nanowires have been fabricated using the anodic aluminum oxide template (AAO). The nanowires with diameters of 50 nm are uniform. The Y2O3:Tb3+ nanowires and Y2O3:Tb3+/AAO composite were characterized by using powder X-ray diffraction (XRD), scanning electron microscope (SEM) and spectrofluorometer techniques. The results indicate that as the annealing temperature was lower than 1000...
Microcrystallines of bio-upconversion (UC) phosphor NaYF4:Yb3+/Er3+ were prepared by the complex precipitation method and the hydrothermal method in the presence of sodium citrate. The precusor synthesized by the complex precipitation method was annealed at different temperature, and another was hydrothermal treated at different time. The structure, morphology and upconversion fluorescence of the...
Hexagonal Al doped ZnO nanorod arrays have been prepared via a simple low-temperature sonicated sol-gel immersion method on Al doped ZnO nanoparticle thin film coated glass substrates. The nanorod arrays were annealed at the temperatures between 300 to 500°C in ambient. The properties of the nanorods have been investigated using field-emission microscope (FESEM), X-ray diffractometer (XRD), photoluminescence...
Nickel silicide is a common contact material for current generation microelectronic devices. As the technology nodes become smaller, forming the NiSi phase with milli-second or below annealing is an attractive alternative to conventional RTA annealing because of the potential for increased device performance and yield. This paper will discuss the use of a dual beam laser spike annealing (LSA) to form...
We report the deposition and characterization of thin ZnO films on 〈100〉 silicon substrates employing Atomic layer deposition (ALD). This technique is considered to have a great potential for nano-scale applications due to its excellent conformality, total surface coverage, uniformity, accurate thickness control, its ability to deposit high k-dielectrics, metals, nucleation layers and barrier materials,...
In this work, we apply nano-embossing technology to fabricate Pb(Zr0.3, Ti0.7)O3 (PZT) ferroelectric thin film nanostructures and investigate the influence of the patterning process on the material and ferroelectric properties by using SEM, XRD and Precision Ferroelectric Tester. Embossing process has been optimized for embossing depth and pattern profile. It was found that embossing will result in...
The radio frequency (RF) sputtering is used as the method and the layer structured bismuth compound of SrBi4Ti4O15 + 4 wt% Bi2O3 ferroelectric ceramic is used as the target to deposit SrBi4Ti4O15 thin films. The excess Bi2O3 content is used to compensate the vaporization of Bi2O3 during the depositing process. SrBi4Ti4O15 (SBT) ferroelectric thin films are deposited on Pt/Ti/SiO2/Si under optimal...
A two-step method was used to fabricate vanadium oxide (VOX) thin films. SEM and IR transmittance spectra were employed to reveal the cross-section morphology and optical property, respectively. The surface composition was obtained using XPS. Experimental results indicated that the VOX film was stable until the grains and insulator-metal transition showed up on increasing annealing pressure or prolonging...
Low temperature bonding technology was developed using In-alloy on Au at a low temperature below 200degC forming robust intermetallics (IMC) joints with high remelting temperature (>300degC), so that after bonding, the IMC joints can withstand the subsequent processes without any degradation. Process parameters on the solder joint were optimized extensively in bonding and annealing process (temperature,...
The dielectric study of HfO2 thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature...
Successive ionic layer adsorption and reaction technique (SILAR) and solution growth technique have been applied to deposit thin films on amorphous glass substrates. Various parameters, like concentration of complexing agent, pH of the solution, deposition temperature, time, have been optimized to achieve good quality films. Films grown by SILAR method have been found to be non-uniform as confirmed...
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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