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This paper presents the design and simulation of a narrow band Low Noise Amplifier (LNA) based on 180nm CMOS technology. This LNA consists of 2-stage design in which common source stage is followed by cascade stage. Different matching techniques is used at input, output and intermediate stage in the design to obtain the best result and to minimize the loss as much as possible. The LNA is designed...
This paper designs a Low Noise Amplifier (LNA) used in RF front end receiver system for wireless sensor network applications. The proposed LNA adopt post distortion technique. This Low Noise Amplifier provides a low noise figure of 2.14 dB with a forward gain of 16.6dB. The LNA circuit consumes a power of 11.6mW for 1.8V supply. The circuit is implemented using 180nm CMOS technology.
Performance of the low-noise amplifier (LNA) determines the sensitivity, impedance matching (reflection), and other critical parameters of the receiver. Carrier aggregation (CA) in LTE-Advanced and upcoming 5G requires the LNA to support multiple-outputs without degrading its dynamic range (DR) performance and thus requires the architectural changes. In this paper, several LNA topologies are presented...
This paper presents an active balun topology with differential imbalance correction and noise cancelling schemes. The imbalance correction scheme can effectively ameliorate both the magnitude and phase errors induced by circuit asymmetry, parasitic and layout mismatch. Noise cancelling exists in each individual stage, which leads to good noise performance. With sufficient gain and low noise figure,...
In this paper, performance analysis of Microstrip based RF subsystems such as impedance transformer, and low noise amplifiers (LNA) are presented in 180 nm CMOS technology employing MS (microstrip) transmission lines. The frequency of operation is 5 GHz. The impedance transformer is designed using coupled microstrip lines for better impedance matching providing return losses of −24.819dB. A modified...
In this paper we have discussed the design of multiple band low noise amplifier using micro strip lines structure and its simulation based performance analysis. LNA design is very difficult work in the receiver part because the signal which received is very weak and gets affected easily with the noise. Therefore it is necessary that new design must give noise figure as low as possible over a wide...
This paper describes the design and realization of a low noise amplifier (LNA) at 410MHz. A balanced amplifier structure which consists of hybrid coupler and amplifier has been used to realize this LNA. This approach gives the advantage of good voltage standing wave ratio, higher linearity and good stability. Noise figure of 1dB with a flatness of 0.5 dB and input-output return losses better than-15dB...
This paper presents a wide band LNA for the IEEE 802.11 WLAN. The LNA uses two feedback paths to enhance linearity and in-band gain ripple. The −3 dB bandwidth is 4 GHz with center frequency of 4.7 GHz. The current reuse technique is utilized to reduce the power consumption and the noise figure (NF). Post-Layout simulation results demonstrate that the achievable input third-order intercept point (IIP3)...
This paper describes the design and implementation of a Ka-Band Low Noise Amplifier (LNA) Sub-System Module for communication satellite payload. A Ka-Band monolithic low noise amplifier has been designed using a metamorphic HEMT with the gate length of 0.13um. A key challenge for Ka-Band LNA design is low noise figure with the high gain. This module contains the LNA MMIC, BPF, WA MMIC and MPA MMIC...
This paper presents a low-power low noise amplifier (LNA) using standard 0.18-μm CMOS technology for X-band satellite receiver applications. Two-stage common source configuration with transformer matching network is chosen to achieve low power, low noise, and compact size while maintaining reasonable gain performance. The measured small signal gain is 13.4 dB at 11 GHz with low power consumption of...
This paper presents a low-power low noise amplifier (LNA) using standard 0.18-µm CMOS technology for X-band satellite receiver applications. Two-stage common source configuration with transformer matching network is chosen to achieve low power, low noise, and compact size while maintaining reasonable gain performance. The measured small signal gain is 13.4 dB at 11 GHz with low power consumption of...
GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is...
In this paper, a new pole-zero technique for reducing thermal noise is represented. In the proposed new pole-zero method, by extracting the noise and voltage-gain equations of the amplifier, the zeros of the noise transfer function (TF) are managed, so that they are placed near the poles of the gain TF. Therefore, significant noise reduction is achieved in the condition of maximizing the small-signal...
This work presents a novel fast switching low power low noise amplifier (LNA) for 6–10 GHz ultra wide band applications using 0.13μm CMOS process from STMicroelectronics. The LNA operates at 1.2V. It achieves a high differential voltage gain about 46 dB with 4.4dB noise figure and a power consumption of 24mW. Fast on and off power switching is achieved by using differential amplifiers with DC coupled...
A low noise amplifier (LNA) for UHF UWB radar receiver is implemented in this paper. Based on negative feedback technology, this LNA has a gain above 32dB. The gain flatness is below 1.1 dB. With the operating current under 50mA, the noise figure is less than 1.5dB. The LNA is integrated into the UWB receiver, which can reduce the gain flatness of receiver and avoid saturation and overload of receiver.
Two fully integrated low noise amplifiers using gm-boosting technique for ultra-low voltage and ultra-low-power GPS applications are designed and simulated in a standard 0.18µm CMOS technology. By employing the folded cascode and forward body bias technique, the proposed LNAs can operate at reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S21) of 17.6 dB with a...
A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25µm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8–2.2 dB has been measured at 26–32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is −11dBm and input IP3 is −1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including...
A 4.5-GHz low-noise amplifier (LNA) utilizing a current-reused technique and a simple LC matching network is proposed. The implemented LNA presents a maximum gain of 35.22-dB by using inductive peaking technique, and a good input matching of 50Ω in the required band. An excellent noise figure (NF) of 2.255-dB was obtained in the frequency range of 4.5-GHz with a power dissipation of 5.04mW under a...
This paper presents the design of a low noise amplifier in 0.13-μm CMOS technology. The conventional inductive degeneration is applied to reduce the noise figure. The amplifying stage uses the cascode structure to increase the gain and achieve a better isolation. Operated at 1.2V, the simulated gain of the LNA is better than 20 dB while the noise figure is less than 1.8 dB with the bandwidth from...
In this paper, two-stage low noise amplifier (LNA) using active bias networks operating around 24 GHz for front-end receiver system is presented. The designed and optimized LNA by means of ADS software achieves an excellent noise figure of 1.78 dB, a power gain of 15.37 dB with respectively 17.34 dB and 22.33 dB input and output return losses. In order to validate the designed two-stage LNA, the obtained...
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