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Low power and reliable “Fab-friendly” resistance switching memory devices (ReRAM) are achieved by controlling composition and morphology of simple binary transition-metal oxides (MeOx) and metal-nitride electrodes (Ti-N) through physical vapor deposition (PVD) methods. Adjusting PVD deposition parameters influence crystalline structure, surface morphology, and stoichiometry, which subsequently influence...
Ce-doped TiO2-multi walled carbon nanotubes (Ce-doped MCNTs/TiO2) composites were successfully synthesized by the hydrothermal method. The crystalline structure, surface morphology and optical properties of samples were characterized using X-ray diffraction (XRD), transmission electron microscope (TEM) and ultraviolet-visible diffuse reflection spectroscopy (UV-vis) analysis technologies. The Ce-doped...
Mischcrystal titanate nanotube has been synthesized via a hydrothermal method on controlling the cosolvent solution. SEM, TEM, XRD, EDS, XPS, FT-IR and Brunauer-Emmett-Teller methods were used to characterize the shape and morphology, crystalline structure, sample formation and specific surface area of as-prepared nanotube. The composition of nanotube could be assigned as H2Ti2O5.H2O and Na2Ti3O7...
For decades that the piezoelectric materials play important roles in various applications. Nowadays, it is of importance that we should avoid the materials which are environmentally toxic. We propose the barium zirconium titanate (BaZrxTi1-xO3 or BZT) ceramics which are the solid solutions of barium titanate and barium zirconate. This material has a phase diagram containing compositions or the Zr:Ti...
Highly-ordered TiO2 nanotube arrays (TNA) by anodizing Ti foil were carried out using a slightly modified electrochemical process. The parameters such as anodization potentials and duration have been varied in order to fabricate the specific length and diameter of TNA. The morphologies of TNA were characterized by field emission scanning electron microscope (Hitachi S-4100 FE-SEM). The crystalline...
We have clarified that, in a metal/high-k gate stack, as well as the variability introduced by random dopant fluctuations (RDF), the threshold voltage variability (TVV) is attributable to the crystal structure and grain size in the metal gate. We have successfully eliminated this additional factor by reducing the grain size in the metal gate. We demonstrated that the incorporation of C into TiN metal...
This paper reports the effect of annealing on fabrication of Strontium Bismuth Titanate SrBi4Ti4O15 (SBT) thin films for piezoelectric pressure sensors. The SBT films and capacitance devices with structure of Al/TiO2/SBT/TiO2/SiO2/Si were fabricated using sol-gel technique. The microstructure of SBT thin films have been systematically studied in as-prepared (un- annealed) condition as well as after...
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