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Low-cost, low-power, and high-sensitivity System-on-Chip (SoC) Hall Effect sensors for 0.18μm and 0.13μm technologies and beyond are developed in this work. A best-inclass current-related sensitivity Si of 418 V/A∗T is achieved by a Hall device with an area of 42 μm × 42 μm. Small offset voltage ranges within +/−1.05 mV, as well as excellent sensor reliability, are demonstrated. The Hall sensors are...
In this paper, intermediate-sized porous silicon (PS) sensing material was prepared via galvanostatic electrochemical anodization technique in a Teflon double-tank cell configuration. Then, tungsten oxide (WO3) thin films were deposited onto the PS surface by using DC reactive magnetron sputtering method. The morphology of PS and WO3/PS were observed by field emission scanning electron microscope...
Heated atomic force microscope (AFM) cantilevers can be used to thermally sense the nanotopography of a surface. Previous reports show that cantilever nanotopography sensitivity can be increased by either modifying the cantilever design or by increasing the operating temperature of the cantilever. This article describes six-fold improvement to cantilever sensitivity by using control mechanisms to...
This paper introduces a class of single crystal silicon micro-scale differential scanning calorimeters for rapid detection and thermal characterization of energetic materials. The suspended membrane micro hotplates have fast time response and high sensitivity, which enables thermal measurements of melting endotherms and deflagration exotherms in energetic materials such as RDX and TNT. The potential...
This paper presents the effect of temperature to strain gauge resistance, sensitivity, and hysteresis of surface micromachining pressure sensor with polysilicon membrane and polysilicon resistor as piezoresistive strain gauge. The resistance value is nominally 2.7 k Omega, under normal atmospheric pressure and room temperature. The experiments measured the relationship between resistance of strain...
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