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The increasing demand for higher performance of ULSI circuits requires aggressive shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays an important role in achieving fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). Despite advancements in plasma processing, the degradation of material properties due to plasma...
Ion implantation and plasma etching are essential process steps for manufacturing semiconductor devices. The damage created by those process steps degrades device characteristics and reliability. Therefore, it is necessary to minimize the damage. The damage structure created by ion implantation is reconstructed during an annealing step, and p-n junction is formed as designed in advance. On the other...
Plasma Dicing uses Deep Reactive Ion Etch (DRIE), also known as The Bosch Process. This is a well-established "front-end" technology, used in silicon MEMS micromachining and via etching in 3D packaging, which is now finding a new home as a dicing technology in the "back-end" of semiconductor processing. This paper will discuss the key issues and integration challenges. This is...
This paper presents the methods of eliminating the plasma-induced Si substrate damage in periphery regions, resulting from high aspect ratio etching process for 3D NAND fabrication. The impact of Si substrate damage is verified by the low and high bias power experiments. The result indicates more Si damage is present with high energy bombardment; therefore, high bias power is recommended to be inhibited...
This work includes design of microwave plasma source, ICP chamber, laser scribing trials, development of the water soluble mask material and DRIE process. Electron cyclotron resonance (ECR) plasma sources are used for a variety of materials processing applications such as semiconductor etching and deposition. ECR sources has several advantages over reactive ion etchers (RIE) commonly used since the...
Sulfur hexafluoride (SF6) plasmas are commonly used in the deep etching of silicon (Si), silicon oxide (SiO2) and more recently silica glass [1]. Due to the complexity of fluorinated plasma environment during Si-based material etching, there are few works presenting experimental and/or theoretical studies about the chemistry established. However, the chemical behavior of the plasma has a direct influence...
Ultra-wide band ladder filters with bandwidth of 41 to 51%, which fully cover the digital TV band, were fabricated using 0-th shear horizontal (SH0) mode plate wave in a (0°, 117.5–120°, 0°) LiNbO3 (LN) ultra-thin plate. A LN/cavity/Si wafer with a number of devices must be separated into chips as they can be mounted on a printed circuit board (PCB). When the wafer is separated using a dicing machine,...
We propose a simple yet effective method for the display based on vapor condensation on the hydrophilic/hydrophobic patterned surfaces. It was found that supersaturated water vapor first formed nanometer-sized water droplet on the condensation nuclei on the patterned surfaces, then the water droplet grew bigger and therefore scatter more light to visualize the outline of the patterns for naked eyes...
Geometrical transition to three dimensional (3D) or Si nanowire (SNW) MOSFETs imposes critical issues regarding process technologies. High energy ion bombardment damage in 3D MOSFETs has been considered inevitable because of the fundamental nature of plasma process. In this study, we further investigated plasma-induced physical damage (PPD) on Si substrates with different surface orientations — (100),...
Several industrial and research and development processes can possibly make use of Inductively Coupled Plasma (ICP) torches in the interaction with either a static or a rotating cylindrical substrate; like for high purity silica overcladding of preforms for optical fiber production, as well as in some calibration procedure for high precision measurement of physical properties of materials and, generally,...
The CdS/CNT composite is of particular interest in many application fields, since it was shown that it is capable of generating photocurrent from visible light with unusually high efficiency and for microwave reduction properties. But there is a little information about the electronic properties. In this paper we focus on improving electrical properties by deposition CdS nanoparticles on CNTs. The...
In this paper, we report the fabrication process of Through Glass Via (TGV) structure and basic design rules for glass based Three-Dimensional Integrated Circuit (3D-IC) packaging as well as a process flow for glass interposer applications. Quartz glass materials have been widely used in many packaging applications for micro electromechanical systems (MEMS), optical devices, and biomedical chips....
This study describes a simple and efficient method for depositing of highly ordered and aligned Zinc Oxide (ZnO) film as the semiconducting channel layer for use in a transparent thin-film transistor (TFT) on a silicon and flexible polyimide (PI) substrate. The effect of an oxygen (O2) plasma power of 18 W followed by low temperature (∼approximately 150 °C) annealing on a hot plate was evaluated,...
We demonstrate the simultaneous growth of multiple optically functional crystalline structures through a complex implantation and diffusion process. This includes ZnTe, ZnO and as-yet undefined silica crystallites doped with Er3+ or Tm3+ which are each characterized optically and structurally.
Positron annihilation is a non-destructive tool for investigating vacancy-type defects in materials. Detectable defects are monovacancies to vacancy clusters, and there is no restriction onsample temperature or conductivity. Using this technique, we studied native and plasma-treatment induced defects in GaN layers grown on Si substrates deposited by metal organic chemical vapor deposition. Measurements...
Increasing demands for higher performance LSIs require three dimensional (3D) structures such as a FinFET and 3D integration package, and a 3D NAND flash memory. We focused on damage creation mechanism in such structures during plasma etchingplasma-induced physical damage (PPD). Compared to PPD in planar FETs (e.g. Si recess), atomistic simulations predicted that, during etching of FinFETs, both “straggling”...
The paper presents results of structure analysis of silicon oxide films prepared by plasma enhanced chemical vapor deposition (PECVD) methods with a high power plasma excitation. The films were deposited from hexamethyldisilazane and oxygen mixture. Dependences on deposition parameters are presented.
This paper reports a three-step fabrication method for highly ordered silica nanowire bunch arrays of diversiform shapes. After patterning of organic polymers on Si substrates through photo lithography, oxygen plasma bombardment is applied to fabricate nanowire bunch arrays. On one hand, oxygen plasma exploits Si source from the substrates, and, subsequently, the gaseous Si react with active oxygen...
Hydrogenation of Si(110) surface due to hydrogen plasma was investigated, using in-situ infrared spectroscopy in multiple internal reflection geometry (in-situ MIR-IRAS). The amorhpous layer was formed. Especially, the SiH2 components were finally formed in the amorphous layer. The formation of the SiH2 is performed with 0.5-order reaction, in a comparion with the hydrogen exposure time. It is suggested...
TiO2 nanotubes are biocompatible and many studies have been carried out for their biotechnological applications, especially in relation to drug carriers. The purpose of this study is to apply TiO2 film on the variety of metal substrates that could be used as biomaterials, and by forming various depth of nanotubes on the films, biocompatibility of the TiO2 nanotube and its ability as a carrier is applied...
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