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In this work, a simple way of growing high quality ZnO nanowire on PS substrate by thermal evaporation technique without application of catalyst is discussed. The PS was generated by electrochemical anodization method using n-type Si (lOO)wafer. During electrochemical etching process, constant current density, J=25 m/cm has been applied in the electrolyte consisting of aqueous Hydro-fluoride acid,...
ZnO single-crystal hexagonal microtubes were controllably fabricated by hydrothermal process. The ZnO microtubes were characterized by scanning electron microscopy, x-ray diffraction and high-resolution transmission electron microscopy. The results show that the as-prepared ZnO microtubes are hexagonal and single crystal in nature and grow on Si (111) substrates along the [0002] direction. SEM images...
In this paper, ZnO thin films were deposited on SiO2/Si (100) substrates by radio frequency magnetron sputtering using high purity (99.999%) ZnO target, grown time was 2 h, 4 h and 8 h respectively. After annealing in pure oxygen atmosphere, high-quality ZnO thin film was obtained. X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) were employed to characterize the quality of the films...
In this paper, ZnO nanorods were synthesized by the hydrothermal process on various substrates such as glass, ITO, p-type porous silicon and n-type porous silicon by dipping in ZnO solution and atomic layer deposition method. The thin films a grown on substrates were washed with deionized water to eliminate residual salts, dried in air, and annealed at 400 degC. Scanning electron microscopy and X-ray...
ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties...
The thermal evaporation deposition technique was used to produce zinc oxide thin film onto p-type silicon substrate at room temperature. The prepared film was post annealed at different temperature from 400 to 800degC in O2 ambient atmosphere for 20 minutes. The effect of post annealing temperature on the structural properties and surface morphological of ZnO thin films have been studied by XRD and...
ZnO micro/nano structures were grown by metalo-organic chemical vapour deposition (MOCVD) and chemical vapour transport and condensation deposition process on Si and glass substrates. Using MOCVD method were grown uniform layers consisting of ZnO nanorods, or multilayer structures composed of nanorods and microrods arrays by the variation of the Ar carrier gas flow rate. A variety of hierarchical...
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