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A novel AlGaN/GaN-based HEMT using gate recess technology is designed and simulated by deploying both Si3N4/SiO2 passivation layers on SiC substrate using Synopsys Tcad tools. The drain current of the proposed device is measured to be 726mA at a threshold voltage of −1.2V from the study of the DC characteristics of the device. The RF characteristics of the GaN/AlGaN HEMT is analyzed by the AC analysis...
The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as an active piezoelectric transducer up to 5MHz. In addition to the amplification effect of piezoelectric...
The ON-state reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma implantation technology under gate overdrive is reported. A critical gate forward voltage (VGC) is observed, beyond which the turn-on voltage of the 2DEG channel exhibits a negative shift. This phenomenon is proposed to be caused by the impact ionization of the F ions in the barrier layer by hot electron injection...
This paper describes the effects of cap layer on sheet carrier concentration and mobility of two dimensional electron gases (2DEGs) in InN-based InN/InGa(Al)N/InN heterostructures. Addition of a InN cap layer in InGa(Al)N/InN heterostructure leads to a very interesting dependence of 2DEGs. The sheet carrier concentration decreases and mobility increases with increase of the InN cap layer thickness...
This paper presents simulation of GaN high electron mobility transistor (HEMT) based device structures for the detection of toxic and hazardous gases like carbon monoxide (CO) and hydrogen (H2), respectively. AlGaN/GaN heterostructures show large potential as sensors due to the presence of 2-dimensional electron gas (2-DEG) at the heterointerface. Due to widebandgap material properties, GaN based...
AlGaN/GaN high electron mobility transistors (HEMTs) were grown on Si substrates by MOCVD. In the HEMT structure, the 1 μm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage current. Afterwards, an AlN spacer layer was inserted between the AlGaN barrier layer and the GaN channel layer to effectively reduce impurity scattering and...
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×1013 cm-2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density...
In this article, a transport model of gate solution AlGaN/GaN high electron mobility transistor has been developed that is capable of accurately predicting the sensitivity of the drain current as well as small-signal parameters such as drain conductance, device transconductance and cutoff frequency to PH values of the electrolyte and to charged adsorbents at the semiconductor-electrolyte interface...
The demonstration of device structure incorporating an ultrathin AlGaN barrier capped with a thin AlN layer in the source-drain access region to maintain high 2DEG charge, with a gate opening formed by selective wet etching of the AlN using heated photoresist is reported. AlN/AlGaN/GaN layer structures are grown on a-plane Al2O3 substrates by metalorganic chemical vapour deposition. In conclusion,...
In recent years, there has been demonstrated a rapid progress of the AlGaN/GaN system applications in optical and electronic device research due to its unique features. One of unique features of AlGaN/GaN system includes chemically stable where stability of surface is essentially important for liquid-phase sensor applications. Besides, AlGaN/GaN also allows highly sensitive detection of surface phenomena...
Due to its high electron density (> 1?? 1013 cm-2) and high electron mobility (> 1000 cm2/V.s), AIN/GaN high-electron mobility transistors (HEMTs) present themselves as attractive candidates for high power and high speed applications. In order to continue increasing their high frequency performance, gate length (Lg) needs to be scaled downed below 30 nm. For ultrascaled HEMTs, the barrier thickness...
AlGaN/GaN-based HFETs are very attractive for RF and power applications due to their superior properties, such as large critical electric field, a high two-dimensional electron gas (2DEG), and a saturation velocity compared to Si-, GaAsand SiC-based devices. State-of-the-art performances of the AlGaN/GaN HFET already showed that f?? = 160 GHz and fmax =190 GHz, and outpower = 32.2 W/mm, which were...
In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al0.3Ga0.7N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al0.3Ga0.7N/GaN double heterostructure...
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