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AlGaN / GaN high electron mobility transistors (HEMTs) were exposed to 800MeV Bi ions with fluence up to 5×107 ions/cm2 at the Heavy Ion Research Facility in Lanzhou (HIRFL) Cyclotrons in Institute of Modern Physics, Chinese Academy of Sciences. Test results show that the drain current Id and the maximum transconductance gmax decreased by 6.8 % and 3.2% respectively, while the gate leakage current...
Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and unpassivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.
We report on the photoresponse of AlGaN/GaN HEMT to THz radiation of low and high intensity. We show that the response vs. gate bias dependence can be described by the theory of Dyakonov-Shur in the whole range of radiation intensity. Unusual behavior of the photoresponse vs. intensity was observed under laser irradiation: a quadratic increase of the response followed by saturation. We speculate that...
This paper shows the impact of low fluence neutrons irradiation on AlGaN/GaN and AlInN/GaN HEMTs. The initial presence of electrical traps seems to play a major role on the evolution of dc electrical characteristics.
Using quantitative high-electron-mobility-transistors (HEMTs)-based defect spectroscopy, the degradation mechanisms of GaN HEMTs subjected to proton irradiation were explored to understand how these devices would operate in high radiation applications. It was observed that proton irradiation in GaN HEMTs caused a permanent threshold voltage (VT) shift (0.59 V) that led to a 30% reduction in IDS, max...
The cathodoluminescent spectroscopy (CLS) in order to examine AlGaN/GaN modulation-doped field-effect transistors that display degraded source-drain current characteristics after 1.8-MeV proton irradiation, along with bulk heterojunctions of materials of field-effect transistor. For both cases, we have observed distinct changes in the spectral emission features due to decreased internal electric-field...
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