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We have developed a novel gas sensor platform for ultra-low-power air quality monitoring based on suspended AlGaN/GaN membranes fabricated on 8 inch Si(111) wafers. Due to precise sensing area recessing, the device shows excellent sensitivity to NO2, a major air pollutant, allowing the detection of single-ppb steps in the gas concentration. A key feature of the device is the small interference from...
In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The...
This paper reports the steady-state and transient temperature response of AlGaN/GaN high electron mobility transistor (HEMT) based structures. In this study, three localized heating schemes, namely, continuous self-heating, pulsed self-heating and heating with on-chip heaters are studied for sensor applications that require controlled heating profiles. Two scenarios were considered for the GaN sensor...
Numerical study is performed for an effective suppression of temperature rise in AlGaN/GaN high electron mobility transistors (HEMT) using our developed algorithm based on finite element method. Such a HEMT can be fabricated on SiC or other substrates with graphene inserted between the AlGaN and the GaN layers. The effects of both geometrical and physical parameters of the structure on the maximum...
In this work, we present HEMTs with nanocrystalline diamond (NCD) heat spreading films, which offer a high thermal conductivity path only 50 nm away from the gate (kNCD of up to 1300 W/m-K).
The purpose of this work was to develop a TCAD device model to study the electrical and thermal characteristics of the AlGaN/GaN HEMT in the time domain in contrast to a DC thermal equilibrium analysis. We first examined a channel temperature technique that utilizes temperature dependence of gate voltage on gate current to predict channel temperature. The predicted channel temperature of Method 3104...
A unified thermal model based on polynomial relationship of ns and EF is presented for AlGaN/GaN high electron mobility transistors (HEMTs). Self heating and polarization effects are included in the calculations of Id-Vd characteristics. The model is based on closed form expressions and does not require elaborate computation. our results agree with published experimental data.
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