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The influence of diamond heat sink layers on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulation in Wachutka's thermodynamically rigorous model of lattice heating. It is shown that the diamond layers can significantly decrease device temperature, thus improving its current-voltage characteristics. Parameters of the...
The use of chemical vapor deposition diamond as a substrate for gallium nitride (GaN) to form GaN- on-diamond has the potential to allow for higher linear power densities in GaN high electron mobility transistors (HEMTs). The increase in GaN HEMT power density on diamond has been limited to date by the electrical leakage in GaN-on-diamond substrates. In this paper we show that to eliminate buffer...
Visible and ultraviolet (UV) micro-Raman spectroscopies are used to study the stress in GaN integrated with diamond grown by chemical vapor deposition. Mapping of stress is accomplished across a 75-mm GaN-on-diamond wafer. UV measurements from both sides of the wafer reveal an unexpected gradient between the tensile stress from the free GaN surface (~0.86 GPa) and the GaN/Diamond interface (~0.23...
This work for the first time explores the use of p-diamond as multi-functional back-barriers in GaN high electron mobility transistors (HEMTs). A well-calibrated self-consistent electro-thermal simulation has revealed that multi-functional p-diamond back-barriers can improve the performance of HEMTs, by achieving over 3 times higher breakdown voltage (BV), at least 30% higher thermal performance,...
This paper reports the theoretical analysis of substrate (Sapphire, Si, SiC, Diamond) effects on the saturation drain current and transconductance of Al.27Ga.73N/GaN high-electron mobility transistor using analytical approach. This model includes polar optical phonon scattering, source-drain resistance and self-heating effects with a wide temperature ranges. It is found that substrates have significant...
In this work, we present HEMTs with nanocrystalline diamond (NCD) heat spreading films, which offer a high thermal conductivity path only 50 nm away from the gate (kNCD of up to 1300 W/m-K).
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