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It has been proposed in the literature to use metal field plates (FPs) in order to increase the breakdown voltage (BV) of AlGaN/GaN HEMTs. In this article we analyze the possibility of using multiple FPs to increase the gate-to-drain BV. We show that FPs with variable oxide thickness (with thinner oxide towards the gate electrode and thicker oxide thickness towards the drain electrode) increase the...
Recently we have developed a numerical technique for the optimization of parameters in semiconductor devices. This technique allows the computation ("redesign") of the doping profiles of most semiconductor devices such as MOSFETs and SOI transistors, in order to decrease (or increase) the values of given parameters of the device. In this presentation we show how to adjust this optimization...
The purpose of this work was to develop a TCAD device model to study the electrical and thermal characteristics of the AlGaN/GaN HEMT in the time domain in contrast to a DC thermal equilibrium analysis. We first examined a channel temperature technique that utilizes temperature dependence of gate voltage on gate current to predict channel temperature. The predicted channel temperature of Method 3104...
We have designed a high breakdown yielding AlGaN/GaN HEMTs on 4 inch silicon wafer without using a field plate or increasing the gate-drain length (Lgd). Our approach is based on improving the total thickness (Tgd) of the AlGaN/GaN epi-layers as high as 9 μm which improves the quality of i-GaN. Growing i-GaN on thick buffer reduces the dislocation density, increases the resistance between the surface...
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