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An unusual substrate current (Isub) and corresponding hot-carrier injection (HCI) degradation of our 18 V nMOS are studied. There is only one maximal Isub for a standard transistor, but for HV nMOS, an abnormal increase of Isub at high gate voltage (Vg) is observed in the Isub-Vg curves with drain voltage (Vd) fixed at 18V. At Vg=4V, Isub exhibits a conventional peak in a standard device and this...
For the first time, on-chip charge pumping method is proposed to characterize ultra thin gate oxide for nano-scale CMOSFETs. Designed on-chip charge pumping system can supply 30-500MHz square-type pulse waves to DUT transistor and measured charge pumping current showed no gate tunneling current dependency which can be easily monitored in very thin gate oxide. In addition to the measurement of interface...
Passivated n-channel MOSFETs can show significant increases in interface trap density after termination of hot carrier stress. The dependence of this poststress interface trap generation mechanism on various parameters was investigated. A simple model based on the generation of both positive and neutral hydrogen by detrapped holes injected during stress can account for all observed phenomena. For...
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