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This paper presents new results revealing the electrical properties of the silicon-on-polycrystalline silicon carbide hybrid substrate. The thermal resistance in the substrate was measured and compared to simulations and is linked to the measured reduced self-heating in LDMOS transistors. The mobility in the device layer was extracted and shows slightly lower values in the hybrid compared to the SOI...
This paper presents some analytical findings of thermal investigations on silicon carbide and that-based devices with the view to the prospective change-over to a novel silicon carbide MEMS technology. A SiC-AlN composition is discussed as an attractive candidate for improving the thermal resistance and the reliability of microsystems for various purposes. A series of temperature, pressure, acceleration...
Thermal characterization of the new Si-on-SiC hybrid substrate has shown thermal properties superior in comparison with SOI. The thermal resistivity was shown to be a factor of four lower, and the lateral thermal spread was much more efficient, as is explained by the excellent heat conductivity of the SiC substrate. These results correspond well to the absence of MOSFET self-heating effects for the...
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
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