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The degradation of high power GaN-based blue light-emitting diodes (LEDs) was investigated by considering the electrical, optical and electroluminescence spectrum aging characteristics. The LED samples are stressed at the condition of 85°C and 85% RH using an injection current of 1000 mA. Optical output power decreases to 80% of initial value after 1000 hours of temperature/humidity accelerated tests...
In this study, we have investigated the high-temperature electro-optical degradation of DC-Aged InGaN based high power GaN LEDs. For this purpose, we fabricated large size blue InGaN/GaN LED chips (1mm??1mm) by using standard LED fabrication processes, where the ITO and Cr/Au served as p-type ohmic contact and n-ohmic contact layer, respectively.
This paper describes an analysis of the reliability of AlGaN-based deep-UV Light-Emitting Diodes (LEDs) emitting in the range 280-340 nm. LEDs have been aged at their nominal operating current, and during treatment their electrical and optical characteristics have been continuously monitored. Measurement results show that (i) constant current stress can induce degradation of the optical power emitted...
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