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The effect of roughness at the SiC/SiO2 interface on electrical properties of 4H-SiC MOS devices has been investigated. Variations in surface roughness were generated by annealing 4H-SiC samples at high temperatures (1550°C-1650°C) with or without a graphitic cap layer. Subsequently, gate oxides were grown on these surfaces for n-type MOS capacitors and n-channel MOSFETs were fabricated. Although...
The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm−2 to 1.5×1010...
Four types of Mo-based ohmic contacts with a varied Al and Ti content are developed and investigated regarding the ohmic properties, surface morphology and edge acuity. It is found out that the Ti/Mo/Ti/Au metallization combines the lowest contact resistivity of 8.8×10−6 Ω.cm2 and low surface roughness of 3.8 nm. The presence of Al in the contact composition does not improve the electrical properties...
The electrical and structural properties of AuGeNi ohmic contact to n-GaAs have been studied. A combination of EDX and X-ray diffraction analysis was used to examine the reactions between AuGeNi-based metallizations and GaAs. Scanning Tunneling Microscope (STM) was used to study surface morphology and surface roughness. By the use of Rapid Thermal Annealing (RTA), contact resistances as low as 5.5×10...
Films of iridium oxide were deposited by the dipping method from a 0.005M Iridium chloride solution in iso-propanol and post-annealed at different temperatures (350, 450 and 550 °C). After three dippings, very thin films, with effective thickness less than 10 nm were obtained. Their effective refractive index at 632.8 nm wavelength changed from 2.495 up to 2.727. X-ray diffraction measurements proved...
Surface morphology dependence on annealing conditions is one of the most important parameters that is being monitored in current manufacturing environments. Understanding the science behind surface properties and anneal temperatures is of high interest. This paper explores this phenomenon in more detail and its practical applications for manufacturing environments.
We report the deposition and characterization of thin ZnO films on 〈100〉 silicon substrates employing Atomic layer deposition (ALD). This technique is considered to have a great potential for nano-scale applications due to its excellent conformality, total surface coverage, uniformity, accurate thickness control, its ability to deposit high k-dielectrics, metals, nucleation layers and barrier materials,...
The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by Nd and Ce by ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to the dose of implantation and to the temperature of...
A two-step method was used to fabricate vanadium oxide (VOX) thin films. SEM and IR transmittance spectra were employed to reveal the cross-section morphology and optical property, respectively. The surface composition was obtained using XPS. Experimental results indicated that the VOX film was stable until the grains and insulator-metal transition showed up on increasing annealing pressure or prolonging...
Textured Ga doped ZnO (GZO) films showing strong light trapping ability were prepared at room temperature. Rapid thermal annealing of the textured-GZO films at elevated temperatures was found to be effective to significantly improve their optical transmission without deteriorating the film conductivity. By applying the annealed GZO films to the microcrystalline Si1-xGex (x=0.1) single junction solar...
With Vanadium ion implantation semi-insulating 4H-SiC layer has been investigated. For n-type and p-type 4H-SiC, resistivities have been reached 7.6times106middotcm and 1.6times1010middotcm respectively after 1650degC annealing. Perfect surface morphology has been observed using a simple Carbon coating film protection. The Vanadium energy levels in forbidden band of n-type 4H-SiC were confirmed as...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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