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In this study, the Ge67Cu33(16 nm) layer and the Ge(3 nm)/Ge67Cu33(16 nm) bilayer were deposited by sputtering at room temperature and used as the recording films for write-once blue laser media. Compared with the crystallization temperature of Ge in the Ge67Cu33 film (387.8-405.1 °C), the crystallization temperature of Ge in the Ge/Ge67Cu33 bilayer can be further reduced to 347.7-382.8 °C. Moreover,...
Theoretical analyses on the thermo-mechanical behavior of power modules designed in a new buildup and interconnection technology based on silver sintering and electroplated copper interconnects have been made. The characteristic difference to other technologies can be seen in the replacement of bonding wires by planar copper interconnects and the high voltage applicability of the resulting modules...
Herein we describe the annealing behavior of copper Through Silicon Vias (TSVs) in a series of experiments. Temperatures ranged from 150 °C to 450 °C and the dwell of the temperature varied between 30 min and 4 h. Copper protrusion, test samples warpage and the copper microstructure were examined in a subsequent characterization. Combining the results of these measurements enables the determination...
The n-type nonstoichiometric Pb0.55Te0.45 materials were prepared by melting and quenching combined with a subsequent high pressure high temperature (HPHT) sintering. After adequately annealed at 623 K in the argon atmosphere, the microstructures and thermal transferring performance of the prepared samples have been systematically investigated. The results show that the grains of samples were apparently...
We prepared (Fe50Co50)73.5Cu1Nb3Si13.5B9 amorphous ribbons and annealed that under different temperatures. Atom force microscope (AFM) was used to analyze its micro morphology. The AFM figures indicated the grain size of Co-doped Finemet alloy annealed at 540??C grew finer which attributes to the addition of Co. The complex permeability was measured by soft magnetic properties measuring system. The...
The dielectric study of HfO2 thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature...
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon...
A new nanopolycrystalline vanadium dioxide (VO2) thin film has been prepared. The thin film is fabricated by reaction-ion sputtering and post-annealing process .The average grain size is 8-10 nm, the phase transition temperature drops down to 35degC, and the temperature coefficiency of resistance (TCR) is -6~7%/K in semiconductor zone. However, the average grain size of conventional microstructure...
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found...
Alkaline metal (AM) atoms filled CoSb3 skutterudites are synthesized by melting method and sintered by spark plasma sintering. The maximal filling fraction or filling fraction limit (FFL) of AM (AM=Li, Na, K, Cs) in CoSb3 are estimated experimentally and show good agreement with our previous calculations based on density functional method. The effect of thermodynamics properties on FFL, crystallographic...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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