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Low-threshold field emission is the intrinsic property for nanocarbon materials. Emission characteristics of planar field cathodes with carbon nanotubes (CNT) deposited from solution to Si, Al, Pd substrates were studied. The field emission threshold value for horizontally aligned CNT was found as low as 4 V/μm. However, the field enhancement in these samples is negligible (<10). We propose to...
The CdS/CNT composite is of particular interest in many application fields, since it was shown that it is capable of generating photocurrent from visible light with unusually high efficiency and for microwave reduction properties. But there is a little information about the electronic properties. In this paper we focus on improving electrical properties by deposition CdS nanoparticles on CNTs. The...
Horizontally aligned carbon nanotubes (HACNTs) were grown from designated trench sidewalls in silicon substrate with chemical vapor deposition (CVD) system. The silicon trenches were fabricated with microelectromechanical system (MEMS) technology, and Fe catalysts were deposited onto the selected trench sidewalls by tilt angle electron beam evaporation. Characterizations of the as-grown CNTs were...
We present a single wall carbon nanotube (SWCNT) based high frequency resonator fabricated using a novel process suitable for mass fabrication. The integration of the electrostatically actuated SWCNT into the silicon structure was achieved by a specially tailored fabrication process which is characterized by simplicity and compatibility with commonly used micro-machining processes. The fabrication...
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Ruthenium porphyrin functionalised single-walled carbon nanotube arrays have been prepared using coordination of the axial position of the metal ion onto 4-aminopyridine pre-assembled single-walled carbon nanotubes directly anchored to a silicon(100) surface (SWCNTs-Si). The formation of these ruthenium porphyrin functionalised single-walled carbon nanotube array electrodes (RuTPP-SWCNTs-Si) has been...
This study presents a novel selective growth method to pattern the high purity and single-walled carbon nanotubes (SWNTs) network by alcohol catalytic chemical vapor deposition (ACCVD). A hydrophilic surface with a contact angle of 44.22deg or even lower can disperse the Co-Mo catalysts easily and uniformly. Therefore, the SWNTs networks can be only formed and grown on the surface of SiO2 layer after...
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