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The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by Nd and Ce by ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to the dose of implantation and to the temperature of...
The evolution of the electrically active acceptor profiles and of the surface morphology in 4H-SiC implanted with multiple energy (from 550 to 40 keV) Al ions was investigated by the combined use of scanning capacitance microscopy (SCM) and atomic force microscopy (AFM), depending on the post-implantation annealing conditions at temperatures from 1400 degC to 1650 degC in Ar or Ar+SiH4 ambient. Medium...
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