The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have used laser thermal annealing (LTA) to activate shallow B and BF2 implants in p-type SOI wafers. Several characterization techniques have been employed in our investigations, such as SiPHER photoluminescence (PL) scans, Sheet resistance measurements (Rs), SIMS and AFM analyses. In sub-melt regime, there is no significant redistribution of implanted dopants; furthermore, BF2 implanted sample...
Effects of Al ions implantation into n-type 4H-SiC followed by annealing at various temperatures have been studied by Atomic Force Microscopy (AFM), Raman scattering, Fourier transform infrared (FTIR) reflectance spectroscopy, and Hall effect measurements. AFM experiments observed a large amount of discontinuous strips on 4H-SiC surface running along three directions after high temperature annealing...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.