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With continuous scaling of transistors in each technology generation, NBTI and Process Variation (PV) have become very important silicon reliability problems for the micro processor industry. In this paper, we develop an analytical model to capture the impact of NBTI in the presence of PV for use in architecture simulations. We capture the following aspects in the model: i) variation in NBTI related...
Negative Bias Temperature Instability (NBTI) has become one of the critical reliability concerns as scaling down CMOS technology especially on the pMOSFET device. A simulation study had been conducted on 32 nm conventional pMOSFET using the technology CAD (TCAD) Sentaurus Synopsys simulator tool. In this paper, the effects of the gate oxide thickness together with drain bias variations on the NBTI...
Negative Bias Temperature Instability (NBTI) in PMOS transistors is a major reliability concern in MOS technology. However, the effect of NBTI is yet to be studied in Nanoelectromechanical Field Effect Transistor (NEMFET). In this paper we study the NBTI for p-type NEMFET, for the first time within Reaction-Diffusion (RD) framework-well established for studying NBTI in MOS transistors. Therefore,...
The physical origin of the Negative Bias Temperature Instability (NBTI) is still under debate. In this work we analyze the single defects constituting NBTI. We introduce a new measurement technique stimulating a charging of these defects. By employing a statistical analysis of many stochastic stimulation processes of the same defect we are able to determine the electric field and the temperature dependence...
We present an outlier screening procedure that has been used to remove outliers in NBTI (Negative Bias Temperature Instability) data, using the statistical approach of Mixed Effect Modeling. Our method has proven very useful with its inherent values on two aspects. First, it removes outliers that are considered to be deviating from the regression line at individual stress conditions. Second, it may...
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